KUESTION:2 Two semiconductor materials have exactly the same properties except that material A has a band gap energy of 1.0eV and material B has a band gap energy of 1.2eV. Determine the ratio of n; of material A to that of material B for T=300K.

Q: (a) Determine the position of the Fermi energy level with respect to the intrinsic Fermi level ir…

A: To find the position of the Fermi levels and concentration of No and Po

Q: Q: Impur semicodictor with energy gap 1 ev and -3 electronics dencity is 10"m and the hole dencity…

A: A semiconductor becomes impure when it is doped with impurity atoms. Based on the type of impurity…

Q: Q: Impur semicodictor with energy gap 1 ev and electronics dencity is 104 m and the hole dencity is…

A: An impure (extrinsic) semiconductor is a semiconductor doped with impurity atoms. Undoped (or pure)…

Q: Calculate the substrate parasitic capacitance for a 5 mm long conductor that is 2 mm wide on a 500…

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Q: Question Two The hole concentration in silicon varies linearly from x = 0 to x = 0.01 cm. The hole…

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Q: The hole concentration in silicon varies linearly from x = 0 to x = 0.01 cm. The hole diffusion…

A: This question is from "Advance Analog Electronics". Under which we are going to study the…

Q: 10. The is a two-terminal semiconductor device whose terminal resistance will vary ...........…

A: ANS 10 photoconductive cell The photoconductive cell is a two terminal semiconductor device whose…

Q: The Fermi energy is 0.30 eV below the conduction band energy Ec at T = 400K. The value of Nc for…

A: We know, Nc=4.82×1015 mnm32  T32 /cm3Nc∝T32 Nc 300KNc 400K=30040032Nc 400K=4332 ×2.8×1019 cm-3Nc…

Q: At the temperature (300° k) we find that (n and (n = 2.5 x 1019) e/m³ in germanium and the energy…

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Q: At room temperature (300 K) with the Fermi level located exactly in the middle of the bandgap, if…

A: We need to find out the probability of state is empty .

Q: Find the values of no per cubic centimeter for silicon [E=1.12 eV] at T= 300 K, if the Fermi energy…

A: We will find out electron concentration by given details .

Q: how much is the nominal current with which a LED diode with semiconductor material (wavelength) LED…

A: (LED)light emitting diode is an electric component which emits light if the electric current flows…

Q: Assume that the Fermi energy level is 0.25 eV above the valence band energy Let T = 300 K Determine…

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Q: Quèstion 3 Extrinsic semiconductors are having more charge carriers than intrinsic semiconductor. O…

A: The electrical conductivity of extrinsic semi conductors is high.

Q: Q: Im pur semicodictor with energy gap 1 ev and -3 electronics dencity is 104 m and the hole dencity…

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Q: Intrinsic semiconductor material is characterized by a valence shell of how many electrons? Select…

A: Intrinsic semiconductor material means pure semiconductor it has not added doping material.…

Q: Which of the following has the maximum Energy gap between conduction band and valence band? O None O…

A: The bandgap is the energy gap between the valence band and conduction band or between the free state…

Q: |Q2:- Determine the values of no and po for silicon at T = 400 K, if the Fermi energy is 0.22eV…

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Q: Question one: no Drive the following expression for the position of Fermi level: Ef¡ = Ef – KT In º…

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Q: Q1/ Assume that the Fermi energy level is 0.25 eV above the valence band energy. Let T = 300 K.…

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Q: The two semiconductor materials have exactly the same properties, except that material A has a band…

A: The expression for the prime concentration of material A is given as: niA2=NcNve-EgAkT…

Q: When a photon (light) with hv energy falls on a semiconductor material, it radiates at the 650 nm…

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Q: Q1/ Assume that the Fermi energy level is 0.25 eV above the valence band energy. Let T = 300 K.…

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Q: The N-type and P-type doping levels of an abrupt P-N junction are ND 1017 cm-3, and NA= = 1015 cm-3.…

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Q: 7. At 300 K, Silicon is doped with NA = 6.0 x 1016 cm3. Find n, and po. Draw the energy band diagram…

A: “Since you have asked multiple questions, we will solve the first question for you. If you want any…

Q: An electron sitting in the -4eV energy level of this atom is struck with a photon of wavelength…

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Q: 5. In a P-type germanium, nį 2.1 x 1019 m3density of boran x 1023 atoms /m3. The electron and hole…

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Q: A detector with a rise time of 3 nS. is connected to a 5 foot long length of RG-58 coaxial cable…

A: Given: A detector with a rise time of 3 nS. is connected to a 5-foot long length of RG-58 coaxial…

Q: Find the position of the intrinsic Fermi level with respect to the center of the bandgap in silicon…

A: Given, Ti=400 Kmn*=1.08momp*=0.56mo

Q: Semiconductors having band gap near 1.5 eV are preferred for solar cells because, select the best…

A: High band gap cells in the range of 1.5 eV absorb more number of photons from sun radiation as…

Q: 27 - Which of the following is obtained when atoms with 3 electrons in the final orbit are added to…

A: Pure semi conductor has four electrons in the final orbit. when a atom with three electrons in its…

Q: The modified work function of an n-channel MOSFET is -0.85 V. If the interface charge is 3 × 104…

A: Given: Modified work function, Wc=-0.85 V Interface charge, q=3×10-4 C/m2 Oxide capacitance, C=300…

Q: Semiconductor LED's have a slow response time and hence a low frequency operation and low band width…

A: LED's are optoelectronic devices that convert electrical current into electromagnetic radiation…

Q: semiconductor is transparent to light with a wavelength longer than 0.87 μm, determine its band gap…

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Q: A silicon pin photodiode with an intrinsic layer, or i-layer, has a width of 10 (µm) and a reverse…

A: It is given that: W=10 μm=10×10-6 mηe=0.9E=35 fJ=35×10-15 J

Q: For a given type of semiconductor material with the band gap energy of 1.5eV, find the maximum…

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Q: Calculate the barrier capacitance of a Germanium p-n junction whose area is 1 mm by 1 mm and whose…

A: Given values are - AreaA=1mm×1mm=10-6m2Thicknessd=2×10-4cmεr=16

Q: QUESTION 5 Given that the effective masses of electron and holes in germanium, calculate the…

A: Semiconductor are the material made of pure Si or Ge or compound . They have conductivity in between…

Q: 5. In a P-type germanium, nį = 2.1 × 1019 m-³density of boran 4.5 x 1023 atoms /m³. The electron and…

A: (a) Calculate the conductivity before the addition of boron atoms.…

Q: 1.17 The hole concentration in silicon is given by P(x) = 10* + 105 exp(-x/L,) The value of Lp is 10…

A: Hole Diffusion current density

Q: At the Fermi temperature TF, EF = kTF . When T = TF, what is the probability that a state with…

A: The Fermi-Dirac distribution f(E) gives the probability that a state with energy E is occupied with…

Q: Q1: Circle the correct answer Silicon has an electron affinity of 4.05 eV and a bandgap of 1.12 eV.…

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Q: A silicon sample at room temperature is doped with gallium (Ga) from one side such that…

A: Given  Ndoping=38.85x1015e−x/α  α = 0.5 µm, and Ndoping >> ni.   Electric field at x= 1µm. E=…

Q: If you know that the Fermi level is below the conduction band by 0.25eV and the energy gap of the…

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Q: Calculate the thermal-equilibrium hole concentration in silicon at T= 250 K. Assume that the Fermi…

A: Given: T=250K Ef=0.27eV Nv at T=300K,

Q: Q2.1 Numerical Aperture If a single mode fiber (SMF) with a core radius of 12 um has a numerical…

A: Given data, In first case core radius r1=12 μm Numerical aperture NA1=0.4 In second case core radius…

Q: 4. Calculate the maximum number of electrons that can occupy a shell with (a) n = 2, (b) n =5, and…

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Q: 3.3 For a silicon crystal doped with boron, what must N be if at T 300 K the electron concentration…

A: The solution can be achieved as follows.

Q: 2. Assume that boron is used to dope silicon. If boron dopant concentration uniform and has a value…

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Photoconductive Cell

Photoconductive cells are light-sensitive resistors in which resistance is inversely proportionated to light intensity when illuminated. These devices consist of a thin single-crystal or polycrystalline film of composite semiconductor materials. Cadmium sulfide (CdS) is used to make the most commercially available photoconductive particles which are sensitive to light in the visible spectrum. Other less commonly used substances respond to infrared light, but not to the visible spectrum. Such substances are lead sulfide (PbS), lead selenide (PbSe), and lead telluride (PbTe), and so on.