Answered: A non-pure semiconductor has an energy…

A non-pure semiconductor has an energy gap of 1ev and a hole density of 1022m−3 at 300K and an electron density of 1016 m−3. Find the Fermi Level location at 500k.

University Physics Volume 3

17th Edition

ISBN:9781938168185

Author:William Moebs, Jeff Sanny

Publisher:William Moebs, Jeff Sanny

Chapter9: Condensed Matter Physics

Section: Chapter Questions

Problem 16CQ: Why does the horizontal Line in the graph in Figure 9.12 suddenly stop at the Fermi energy? Figure...

See similar textbooks

Related questions

Q: The energy gaps Eg for the semiconductors silicon and germanium are, respectively, 1.12 and 0.67 eV.…

Q: Calculate the thermal-equilibrium hole concentration (cm-³) in Silicon at T=250 k. Assume the Fermi…

A: The thermal equilibrium hole concentration in silicon is 7.35 × 1013 cm-3 Note : Please recheck your…

Q: A semiconductor has an energy gap E= 1.40 eV. If the electron mass and hole mass are 0.5x 10-31kg…

Q: Consider a silicon pn junction at T 300 K with acceptor doping concentrations of 10 cm and donor…

Q: Calculate the conductivity of an intrinsic silicon at room temperature. If ten electrons out of 1010…

A: Here given the intrinsic sillicon at room temperature. 10 electros out of 10¹⁰ electron goes to…

Q: If the temperature of a piece of a metal is increased, does the probability of occupancy 0.1 eV…

Q: Consider a pure semiconductor material of silicon. At 300 K, the electron concentration in the…

A: we have np=Nc(T)Nh(T)e-EgkT hence at T = 300 k 1016×1017=Nc(300)Nh(300)e-Eg300k ---- (1) It is also…

Q: In a p-n junction diode, the current I can be expressed as eV 1=1, exp 2k„T where I, is called the…

A: In the given question , We have to determine the forward current at a given forward voltage.

Q: Determine the thermal-equilibrium concentrations of electrons and holes in silicon at T = 300 K if…

Q: Q1/ At 300K, the intrinsic concentration of Ge is 2.5 x 1019 m-3. Given thet the mobility of…

A: Here at given temperature at 300 k the intrinsic concentration of th Ge is 2.5 × 10¹⁹ m-³. It also…

Q: Gold has an atomic mass of 197 u, a density of 19.3 x 10° kg/m³, a Fermi energy of 5.54 eV, and a…

A: Given data: The fermi energy is Ef=5.54 eV. The resistivity of gold is ρ=2.04×10-8 Ω·m. Atomic mass…

Q: Gold has an atomic mass of 197 u, a density of 19.3 x 10^3 kg/m^3, a Fermi energy of 5.54 eV, and a…

A: Given Atomic mass of the gold = 197 u Density = 19.3 x 103 kg/m3 Fermi energy = 5.54 eV…

Q: Calculate No(E), the density of occupied states, for copper atT = 1000 K for an energy E of (a) 4.00…

Q: Given the fermi energy and electron concentration 7.00 eV and 8.0×10²6 e¯/m³ respectively of a…

Q: Calculate the concentration of the electrons and the holes (in electrons/m?) for intrinsic silicon…

Q: Consider a semiconductor bar with w-0.1 mm, d-10 um and L-5 mm. for B-104 Wb/cm2, and a current of 1…

A: Solution: Given that w =0.1 mmd=10 μmL=5 mmB=10-4 Wb/cm2

Q: Consider the silver in the metallic state with one free electron per atom. Calculate the Fermi…

Q: For faithful amplification by a transistor circuit, the value of VcEShould for silicon transistor А.…

A: In the given question we have to discuss about the value of voltage of common emitter transistor…

Q: At what temperature do 1.30% of the conduction electrons in lithium (a metal) have energies greater…

Q: In an N-type semiconductor at T = 300 K, the electron concentration varies linearly from 2 x 10^18…

Q: What is the probability that a state 0.0620 eV above the Fermi energy will be occupied at (a) T= 0 K…

A: a) Fermi level is the highest energy state occupied by electrons in a material at absolute zero…

Q: For a solid metal having a Fermi energy of 8.500 eV, what is the probability, at room temperature,…

A: Given Data: The energy occupied by an electron is, E=8.520 eV The Fermi energy is, Ef=8.500 eV The…

Q: A typical value for the Fermi energy is 1.00 eV. At 298 K, calculate the energy above the Fermi…

Q: Consider a silicon pn junction at T 300 Kwith an acceptor doping concentration (1x 1018cm-3) and a…

A: Given:- T= 300 K Na= 10^18 cm-3 Nd= 10^15 cm-3 Ni= 1.5×10^10 cm-3 Calculating VT:- VT= KT/e =…

Q: At 300K, the intrinsic concentration of Ge is 2.5 × 1019 m-3. Given thet m? m2 the mobility of…

A: Intrinsic concentration of Ge at 300 K n=2.5*1019/m3, mobility of electron ue=0.38 m2/V.s, mobility…

Q: The probability for an electron to occupy a level at 120 °C is(2×10-6). Find the location of this…

Q: Donor atoms introduced into a pure semiconductor at room temperature: A. lower the Fermi level B.…

A: THE CORRECT ANSWER IS (C) INCREASE THE NUMBER OF ELECTRONS IN THE CONDUCTION BAND.

Q: The occupancy probability at a certain energy E1 in the valence band of a metal is 0.60 when the…

A: The probability that an energy state E is occupied by an electron in a solid is given as

Q: A state 63 meV above the Fermi level has a probability of occupancy of 0.090.What is the probability…

Q: As the doping density of a semiconductor increases, the :mobility generally Stays the same Increases…

A: As the doping density of a semiconductor increases, the :mobility generally decreases.

Q: d) If the energy gap of the InP semiconductor at T 4.5 x 10-4 eV/K and B = 327 K. Find the energy…

Q: Pure silicon wafer at the room temperature has an electrical conductivity of 5.5x1040'm3. The…

Q: An N-type semiconductor is a semiconductor doped with

Q: The Fermi energy of copper is 7.0 eV. Verify that the corresponding Fermi speed is 1600 km/s.

Q: are and contrast the temperature dependence of the electrical conductivities of a intrinsic (e.g.,…

A: A semiconductor is a material whose electrical conductivity falls between that of a conductor and an…

Q: At T = 300 K, how far above the Fermi energy is a state for which the probability of occupation by a…

Q: At room temperature, the energy gap in the semiconductors is the energy gap in the conductors.

A: Dear student The energy gap is the difference of energy between Valance band and Conduction band.

Q: At 25°C, the electrical resistivity of an intrinsic Gallium Arsenide (GaAs) is 0.042 ohms.cm and the…

A: The electrical conductivity of GaAs at 25oC can be determined as, Here, ρ represents the electrical…

Question

A non-pure semiconductor has an energy gap of 1ev and a hole density of 1022m−3 at 300K and an electron density of 1016 m−3. Find the Fermi Level location at 500k.

Expert Solution

This question has been solved!

Explore an expertly crafted, step-by-step solution for a thorough understanding of key concepts.

SEE SOLUTION Check out a sample Q&A here

Step 1

VIEW

Step 2

VIEW

Step by step

Solved in 2 steps

SEE SOLUTION Check out a sample Q&A here

Knowledge Booster

Learn more about

Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, physics and related others by exploring similar questions and additional content below.

Similar questions

Why does the horizontal Line in the graph in Figure 9.12 suddenly stop at the Fermi energy? Figure 9.12 (a) Density of state for a free electron gas; (b) probability that a state is occupied at T = 0 K; (c) density if occupied states at T = 0 k.
Consider the semiconductor crystal at 300 K. Where n, 1.8 x 10^6 cm. a- In a sample containing only 2.5x10^15 cm* ionized donors, where is the Fermi level (E-E;) in e.v ? b- In a sample containing 2x10^15 cm* ionized donors and 9 x 10^14 cm ionized acceptors, where is the Fermi level (Er-E;) in e.v ?
Silicon is doped with phosphorus atoms (column V of Mendeleev table) with a concentration of 1018 cm-3 a- What is, at 27 °C, the electron density in doped Si. Use this result to derive the hole density. Which type of semiconductor is obtained? b- Calculate, at 27 °C, the position of the Fermi level EF and plot the band diagram.
The electron number density in a semiconductor varies from 1020 m³ to 10¹2 m³ linearly over a distance of 4 µm. Determine the electron diffusion current and electric field at the midpoint if no current flows, He = 0.135 m²V-¹s¹ and T = 300 K.
A pure semiconductor has a band gap of 1.25 eV. The effective masses of electron and hole are 0.1me and 0.5me respectively, where me is the free electron mass. The carrier scattering time is 0.2 ps (Pico seconds). Find the following at a temperature of 300 K(a) Concentration of electrons and holes(b) Fermi energy(c) Electron and hole mobilities(d) Electrical conductivity
In an N-type semiconductor at T = 300 K, the electron concentration varies linearly from 2 x 10^18 to 5 X 10^17 per cc over a distance of 1.5 mm and the diffusion current density is 360 A/cm^2. Find the mobility of electrons.
An intrinsic semiconductor has n=2x1016/m was doped with 1018 /m acceptor impurities. If the mobility of the electrons is 0.13m²/y.s and the mobility of holes is 0.04m/y.s, determine the conductivity, and what is the percentage ratio of the electrons and holes conductivity?
Determine the thermal-equilibrium concentrations of electrons and holes in silicon at T =300 K if the Fermi energy level is 0.2 eV above the valence-band energy. Assume that the bandgap of semiconductor is 1 eV. Nc=2x1019 cm-3 and Nv=1x1019 cm-3. Take kT=25.875 meV
Starting with the Fermi energy given in Table , estimate the number of conduction electrons per atom for aluminum, which has density 2.70 x 103 kg/m3 at T = 300 K
Which statement about the intrinsic carrier concentration in a semiconductor material is FALSE? The intrinsic carrier concentration is exponentially dependent on the inverse of the temperature of the semiconductor material. In an intrinsic semiconductor material, the concentration of electrons in the conduction band is equal to the concentration holes in the valence band. The intrinsic carrier concentration of a semiconductor material at a constant temperature depends on the Fermi energy. The intrinsic Fermi energy is positioned near the center of the bandgap for an intrinsic semiconductor.
A state 63 meV above the Fermi level has a probability of occupancy of 0.090.What is the probability of occupancy for a state 63 meV below the Fermi level?
The concentration of acceptor silicon atom is 5x10^21 m^-3 at 300 ° K . How far from the edge of the valence band the fermi level if mh = 0.6 m .