Q1/ At 300K, the intrinsic concentration of Ge is 2.5 x 1019 m-3. Given thetm2and 0.18V. Secm2the mobility of electron and hole are 0.38respectively.V. SecFind the conductivity of pure Ge semiconductor.

Here at given temperature at 300 k the intrinsic concentration of th Ge is 2.5 × 10¹⁹ m-³. It also…

Q1/ At 300K, the intrinsic concentration of Ge is 2.5 x 1019 m-3. Given thet the mobility of electron and hole are 0.38 -and 0.18 V. Sec respectively. V. Sec Find the conductivity of pure Ge semiconductor.

Q1/ At 300K, the intrinsic concentration of Ge is 2.5 x 1019 m-3. Given thet the mobility of electron and hole are 0.38 -and 0.18 V. Sec respectively. V. Sec Find the conductivity of pure Ge semiconductor.

Glencoe Physics: Principles and Problems, Student Edition

1st Edition

ISBN:9780078807213

Author:Paul W. Zitzewitz

Publisher:Paul W. Zitzewitz

Chapter29: Solid-state Electronics

Section29.1: Conduction In Solids

Problem 8PP

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Question

Q1/ At 300K, the intrinsic concentration of Ge is 2.5 x 1019 m-3. Given thet
m2
and 0.18
V. Sec
m2
the mobility of electron and hole are 0.38
respectively.
V. Sec
Find the conductivity of pure Ge semiconductor.

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