3.4 A uniform bar of n-type silicon of 2 um length has a voltage of 1 V applied across it. If Np= 10"/cm and u, = 1350 cm/V s, find (a) the electron drift velocity, (b) the time it takes an electron to cross the 2-um length, (c) the drift-current density, and (d) the drift current in the case the silicon bar has a cross sectional area of 0.25 um. Ans. 6.75x 10 cm/s; 30 ps; 1.08 x 10ʻA/cm": 27 HA

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3.3 Current Flow in Semiconductors 135
EXERCISE
3.4 A uniform bar of n-type silicon of 2 um length has a voltage of 1 V applied across it. If
16
Np = 10"/cm and H, = 1350 cm/V s, find (a) the electron drift velocity, (b) the time it takes an
electron to cross the 2-um length, (c) the drift-current density, and (d) the drift current in the case
the silicon bar has a cross sectional area of 0.25 um.
Ans. 6.75 x 10° cm/s; 30 ps; 1.08 x 10'A/cm"; 27 µA
Transcribed Image Text:3.3 Current Flow in Semiconductors 135 EXERCISE 3.4 A uniform bar of n-type silicon of 2 um length has a voltage of 1 V applied across it. If 16 Np = 10"/cm and H, = 1350 cm/V s, find (a) the electron drift velocity, (b) the time it takes an electron to cross the 2-um length, (c) the drift-current density, and (d) the drift current in the case the silicon bar has a cross sectional area of 0.25 um. Ans. 6.75 x 10° cm/s; 30 ps; 1.08 x 10'A/cm"; 27 µA
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