3. A semiconductor of bar of length 8 µm and a cross- sectional area of 2 µm² is uniformly doped with donors with much higher concentration than the intrinsic concentration (10" cm³) such that ionized impurity scattering causes the majority carrier mobility to be a function of doping Np (cm³). (No acceptors or NA=0 cm³) ND |1020 cm- Hn = 800 cm²/V-s The electron drift current for an applied voltage of 160 V is 10 mA. (a) Calculate the doping concentration in the bar. (b) Calculate electron mobility due to ionized donor scattering. Hints: Convert um to cm Calculate electric filed, check if the sample is in the velocity saturation region. Calculate Ja (drift) =q nao (saturation velocity) Assume saturation velocity = 107 cm/s Calculate n0 = Np O Ei
3. A semiconductor of bar of length 8 µm and a cross- sectional area of 2 µm² is uniformly doped with donors with much higher concentration than the intrinsic concentration (10" cm³) such that ionized impurity scattering causes the majority carrier mobility to be a function of doping Np (cm³). (No acceptors or NA=0 cm³) ND |1020 cm- Hn = 800 cm²/V-s The electron drift current for an applied voltage of 160 V is 10 mA. (a) Calculate the doping concentration in the bar. (b) Calculate electron mobility due to ionized donor scattering. Hints: Convert um to cm Calculate electric filed, check if the sample is in the velocity saturation region. Calculate Ja (drift) =q nao (saturation velocity) Assume saturation velocity = 107 cm/s Calculate n0 = Np O Ei
Chapter59: Motor Startup And Troubleshooting Basics
Section: Chapter Questions
Problem 12SQ: How is a solid-state diode tested? Explain.
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