Power semiconductor device

Research Background Power electronics circuits convert electric power from one form to other using electronic devices. By using semiconductor devices as switches power electronics circuits function, thereby controlling or modifying a voltage or current. Power electronics application range from high-power conversion equipment such as dc power transmission to everyday appliances, such as cell phone chargers, cordless screwdrivers, power supplies for computers, and hybrid automobiles. Power electronics includes

Very high power IGBTs Ultra high power, high voltage, power electronics is on the verge of a new era. Two new power semiconductor technologies, the high voltage IGBT are improving the performance, simplifying the design and increasing the reliability of applications ranging from 100's of KVA to many MVA. In recent years, the performance of industrial power electronics for line voltages up to 600VAC has advanced rapidly. Initially, improvements were made possible by the development of high current

Based High Voltage 3-D Power Module Atanu Dutta, Simon Ang, and Zhong Chen Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, USA Abstract—In this paper, a low temperature co-fired ceramic (LTCC) interposer based high voltage (13 kV) half-bridge power module is proposed. The proposed power module utilized multi-layer LTCC interposers to perform 3-D stack, which provides series connection between devices to achieve high voltage rating of the power module. The proposed

or a semiconductor or a semi-metal depending its indexes. Carbon nanotube is actually cylindrical form of graphene sheet. By using tight binding model(TB), I got electronic band structure of graphene which was the basis for the Monte Carlo Simulation as it is superior then Boltzmann transport equation(BTE) for analyzing band structure. I have decent command on MathLab programming language. I acquired A+ grade in my thesis and not only in the thesis but also I got good grade in all semiconductor related

forerunner in the technology and innovations of semiconductor products, such as: defense, metallurgical and digital products. Texas Instruments Inc. has a 29% revenue share amongst the Top-Ten analog IC companies. Moreover, a preponderance of the mobile phones sold globally contain computer models as well as other automotive systems • Innovation in Research and Development: TI was the pioneer of semiconductors in the 1950’s, actually inventing the semiconductor. With their strong abilities in production

in the expansion of business. The relocation office is in Krystal Point, Penang. A great success happened in 2007 when this company successfully develops and launches Amoeba 1340. The usage of this product is to test wireless for SMU and RF semiconductor devices located in the mobile phone such as smart phones and cell

bandgap semiconductor with a bandgap of 3.4 eV commonly used in light-emitting diodes since the 1990s. GaN has a low sensitivity to ionizing radiation which makes it a suitable material for solar panels on satellites. Various military and space application also benefit from the usage if this radiation hardened material. Besides the wide bandgap, high breakdown field and high saturation velocity of GaN make it very promising for high power, high-speed and high temperature electronic devices. GaN devices

The figure 1 gives a brief description of the 3-D FinFET structures which have been simulated. According to the International Technology Roadmap for Semiconductors (ITRS), The gate length (Lgate) is 15 nm, which corresponds to the 7/8-nm technology having 0.64 nm as gate- oxide thickness. The height (HSi) and width of fin (WSi) are 40nm and 8nm respectively whereas the the fin pitch is 30 nm and the fin aspect ratio is 5 which are taken from the characteristics of Intel 22-nm [1] and 14-nm FinFET

bandgap semiconductor with a bandgap of 3.4 eV commonly used in light-emitting diodes since the 1990s. GaN has a low sensitivity to ionizing radiation which makes it a suitable material for solar panels on satellites. Various military and space application also benefit from the usage if this radiation hardened material. Besides the wide bandgap, high breakdown field and high saturation velocity of GaN make it very promising for high power, high-speed and high temperature electronic devices. GaN devices

There is an impressive argument to made by some critics that the semiconductor industry considers the contamination free production process of its state of the art semiconductor wafers, paramount to that of the future health and safety concerns of its labor force. Does this argument stand? Does there in fact exist a hostile environment for the industries microchip production workers and could it play a secondary role to the concepts of innovation and profits? Could the handling of known toxic materials