Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
expand_more
expand_more
format_list_bulleted
Question
Chapter 5, Problem D5.32P
To determine
The dimensional change for solving the problem, the length and width of device, ratio as given and the voltage for the standard device as well as the new deiceas given in the problem.
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solutionStudents have asked these similar questions
Which of the following is a type of Metal Oxide Semiconductor Field Effect Transistor:
O P channel JFET
O None of them
O N channel D- MOSFET
in
O N channel JFET
A simple diode rectifier has 'ripples in the output wave which makes it unsuitable as a DC source. To
overcome this one can use
of
a capacitor in series with a the load resistance.
stion
Select one:
O True
O False
8 UTM Figure B.1 shows a diode circuit and its DC load line analysis. Based on the
SUT
information obtained
UT
UT
I kQ
+ VpQ-
3 UTM UTM
Vs
3
500 2
UTM & UM
TM &UTM UTM
UTM &UTM 5 UTM
Figure B.1
UTM & U UTM
VD (V)
0.72
UTM
i UTM
UTM
Consider an nMOS with tox=9 nm, µn=500cm²/Vs, Vt=0.7V, and W/L=10. Find the drain
currents for the following cases:
i. Ves=5 and VDs=5V
ii. Ves=5 V and VDs=1V
Chapter 5 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 5.1 - Prob. 5.1ECh. 5.1 - Prob. 5.2ECh. 5.1 - Prob. D5.3ECh. 5.2 - Prob. 5.4ECh. 5.2 - Prob. 5.5ECh. 5.2 - Prob. 5.6ECh. 5.2 - Prob. 5.7ECh. 5.3 - Prob. D5.8ECh. 5.3 - Prob. D5.9ECh. 5.3 - Prob. D5.10E
Ch. 5.3 - Prob. 5.11ECh. 5.3 - Prob. 5.12ECh. 5.3 - Prob. D5.13ECh. 5.3 - Prob. D5.14ECh. 5.3 - Prob. 5.15ECh. 5.4 - Prob. 5.16ECh. 5.4 - Prob. 5.17ECh. 5 - Prob. 5.1PCh. 5 - Prob. 5.2PCh. 5 - Prob. 5.3PCh. 5 - Prob. 5.4PCh. 5 - Prob. D5.5PCh. 5 - Prob. 5.6PCh. 5 - Prob. D5.7PCh. 5 - Prob. 5.8PCh. 5 - Prob. 5.9PCh. 5 - Prob. 5.10PCh. 5 - Prob. 5.11PCh. 5 - Prob. 5.12PCh. 5 - Prob. 5.13PCh. 5 - Prob. 5.14PCh. 5 - Prob. 5.15PCh. 5 - Prob. 5.16PCh. 5 - Prob. 5.17PCh. 5 - Prob. 5.18PCh. 5 - Prob. 5.19PCh. 5 - Prob. D5.20PCh. 5 - Prob. 5.21PCh. 5 - Prob. 5.22PCh. 5 - Prob. 5.23PCh. 5 - Prob. 5.24PCh. 5 - Prob. 5.25PCh. 5 - Prob. 5.26PCh. 5 - Prob. 5.27PCh. 5 - Prob. 5.28PCh. 5 - Prob. 5.29PCh. 5 - Prob. 5.30PCh. 5 - Prob. 5.31PCh. 5 - Prob. D5.32PCh. 5 - Prob. D5.33PCh. 5 - Prob. 5.34PCh. 5 - Prob. 5.35PCh. 5 - Prob. D5.36PCh. 5 - Prob. 5.37PCh. 5 - Prob. 5.38PCh. 5 - Prob. 5.39PCh. 5 - Prob. 5.40PCh. 5 - Prob. 5.41PCh. 5 - Prob. 5.42PCh. 5 - Prob. 5.43PCh. 5 - Prob. D5.44PCh. 5 - Prob. 5.45PCh. 5 - Prob. D5.46PCh. 5 - Prob. 5.47PCh. 5 - Prob. D5.48PCh. 5 - Prob. D5.49PCh. 5 - Prob. D5.50PCh. 5 - Prob. D5.51PCh. 5 - Prob. 5.52PCh. 5 - Prob. D5.53PCh. 5 - Prob. 5.54PCh. 5 - Prob. 5.55PCh. 5 - Prob. 5.56PCh. 5 - Prob. 5.57PCh. 5 - Prob. 5.58PCh. 5 - Prob. 5.59PCh. 5 - Prob. 5.60PCh. 5 - Prob. 5.61PCh. 5 - Prob. 5.62PCh. 5 - Prob. 5.63PCh. 5 - Prob. 5.64PCh. 5 - Prob. 5.65PCh. 5 - Prob. 5.66PCh. 5 - Prob. 5.67P
Knowledge Booster
Learn more about
Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.Similar questions
- Given the PMOSFET circuit below with VDD = 5 V, and characteristics k = 25 μA/V2, Vth = 0.75V and R = 100, solve for the drain voltage and drain currentarrow_forwardStringing of cells in a PV panel Draw the tabbing and bus-bar wires for a 72 cell module using three substrings and a junction box mounted in the typical central location. Each substring is protected by a bypass diode. No precision drawing is needed (i.e. you don't need to draw every single cell, the main arrangement of substring and how you connect to the jnction-box is relevant.arrow_forwardGiven the PMOSFET circuit below with VDD = 5 V, and characteristics k = 75 μA/V², Vth = 0.75V and R = 10000; solve for the drain voltage and drain current VDD R VD = ? ww iD = ?arrow_forward
- " A 2N5459 has VGS(off) = -8 v and IDSS = %3D 16mA. What is the drain current at the half cutoff point?arrow_forwardFor an N channel E - MOSFET, what is the direction of electron flow? A) The electron flow is from source to drain B) The electron flow is from source to gate The electron flow is from drain to gate (D) The electron flow is from drain to source In FET, An outward-pointing arrow represents (A) P-type substrate B) extrinsic substrate C) intrinsic substrate D) N-type substrate When a JFET is cut off, the depletion layers are_____. A) Close together B) Far apart Touching (D) Conductingarrow_forwardThe gate voltage in a silicon JFET in the saturation region is reduced from Vg= -3.1V to Vg= -2.8V. If the resultant drain source current Ips changes from 1mA to 1.9mA calculate the transconductance of the JFET in units of mA/V. Give your answer to 1 decimal place.arrow_forward
- 24. Set up a midpoint bias for a JFET with Ipss = 14 mA and VGs(ofm = -10 V. Use a 24 V dc source as the supply voltage. Show the circuit and resistor values. Indicate the values of Ip, VGs, and Vps-arrow_forwardBriefly describe the operation of a silicon n-channel JFET, including effect of the gate voltages VG = 0 and VG < 0 and source-drain voltages Vos on the flow of charge carriers in the device before and after 'pinch-off'. Use an l-V graph to illustrate your answer. 4. Gate Source Drain FIGURE CREDIT: An Introduction to Semiconductor Devices, D. Neamenarrow_forwardGiven the PMOSFET circuit below with VDD = 5 V, and characteristics k = 75 µA/V², Vth = 0.75V and R = 10000; solve for the drain voltage and drain current Note: Take caution in the units used for k and R. Your answer must be accurate to 1 decimal place. VDD VD =? iD = ?arrow_forward
- Given the data sheet for an N-channel JFET is: Idss = 10 mA, Vp = 4V. What is the value of Vgs %3D for a drain current of 3 mA flowing ? Answer:arrow_forwardWhat is the output voltage across a load resistor if it is paralleled with a forward biased silicon diode? The resistor network is supplied with 10 V. * O A. 0.7 V O B. 9.3 V O C. 10 V O D. Can't be solve, lack of data.arrow_forwardChoose whether the followings are True or False. 1. The MOSFET has 2 terminals Drain and Source. 2. An E-MOSFET operates in the depletion mode. 3. The LED emits light when reverse biased. 4. In the n-channel E-MOSFET, VGs(th) has a positive value. 5. A diode conducts current when forward biased and blocks current when reverse biased 6. An n-channel D-MOSFET with a positive Vcs is operating in the enhancement mode. 7. The varactor diode acts as a variable capacitor under forward bias conditions. 8. Once a BJT transistor is in the saturation, a further increase in base current will cause the collector current to increase. 9. In a given BJT transistor amplifier, Rc=2.2KQ and r'=20 Q then the voltage gain is equal to 110. 10. Voltage Amplification Av in a BJT is the output voltage divided by the input currentarrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
- Introductory Circuit Analysis (13th Edition)Electrical EngineeringISBN:9780133923605Author:Robert L. BoylestadPublisher:PEARSONDelmar's Standard Textbook Of ElectricityElectrical EngineeringISBN:9781337900348Author:Stephen L. HermanPublisher:Cengage LearningProgrammable Logic ControllersElectrical EngineeringISBN:9780073373843Author:Frank D. PetruzellaPublisher:McGraw-Hill Education
- Fundamentals of Electric CircuitsElectrical EngineeringISBN:9780078028229Author:Charles K Alexander, Matthew SadikuPublisher:McGraw-Hill EducationElectric Circuits. (11th Edition)Electrical EngineeringISBN:9780134746968Author:James W. Nilsson, Susan RiedelPublisher:PEARSONEngineering ElectromagneticsElectrical EngineeringISBN:9780078028151Author:Hayt, William H. (william Hart), Jr, BUCK, John A.Publisher:Mcgraw-hill Education,
Introductory Circuit Analysis (13th Edition)
Electrical Engineering
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:PEARSON
Delmar's Standard Textbook Of Electricity
Electrical Engineering
ISBN:9781337900348
Author:Stephen L. Herman
Publisher:Cengage Learning
Programmable Logic Controllers
Electrical Engineering
ISBN:9780073373843
Author:Frank D. Petruzella
Publisher:McGraw-Hill Education
Fundamentals of Electric Circuits
Electrical Engineering
ISBN:9780078028229
Author:Charles K Alexander, Matthew Sadiku
Publisher:McGraw-Hill Education
Electric Circuits. (11th Edition)
Electrical Engineering
ISBN:9780134746968
Author:James W. Nilsson, Susan Riedel
Publisher:PEARSON
Engineering Electromagnetics
Electrical Engineering
ISBN:9780078028151
Author:Hayt, William H. (william Hart), Jr, BUCK, John A.
Publisher:Mcgraw-hill Education,
CMOS Tech: NMOS and PMOS Transistors in CMOS Inverter (3-D View); Author: G Chang;https://www.youtube.com/watch?v=oSrUsM0hoPs;License: Standard Youtube License