PHYSICS F/SCI.+ENGRS.,STAND.-W/ACCESS
PHYSICS F/SCI.+ENGRS.,STAND.-W/ACCESS
6th Edition
ISBN: 9781429206099
Author: Tipler
Publisher: MAC HIGHER
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Chapter 38, Problem 71P
To determine

The number of free electrons present per potassium atom in a crystal of potassium.

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Q2. Transistors are manufactured by doping semiconductors. The diffusion coefficient of phosphorus in Si is D = 6.5 x 10-11 mm2/s at a temperature of 950°C. Assume the source provides a surface concentration of 1020 atoms/cm3 and the diffusion time is one hour. Assume that the silicon wafer initially contains no phosphorus. Calculate the depth at which the concentration of phosphorus will be 1018 atoms/cm3.
1 A bar of n-type germanium 10mmx1mmx1mm. The electron density in the bar is 7×10²1 m³ and B=0.2 Wb/m². If one millivolt is applied across the long ends of the bar, determine the current through the bar, the Hall coefficient and the Hall voltage. Assume n = 0.39 m²/v.s. Ans: 43.6 μA; 8.9×10-4 m³/C; 7.76 μV.
A 12.0 µF capacitor is charged to a potential of 50.0 V and then discharged through a 175 Qresistor. How long does it take the capacitor to lose half of its charge? Select one: t%3D1.46 ms t = 5.00 ms t%3D0.87ms t%34.36ms None of these is correct Next pag
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