Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
expand_more
expand_more
format_list_bulleted
Concept explainers
Question
Chapter 3.3, Problem 3.4E
(a)
To determine
The electrons drift velocity.
(b)
To determine
The time taken by the electron to cross the
(c)
To determine
The drift current density.
(d)
To determine
The drift current.
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solutionStudents have asked these similar questions
A silicon semiconductor is in the shape of a rectangular bar with a crosssectional area of 10 μm × 10 μm, a length of 0.1 cm, and is doped with Arsenic at 5 × 1016 atoms/cm3 concentration. (T = 300 K).a) determine the current if 5 V is applied across the length. b) repeat part (a) if the length is reduced to 0.01 cm. c) calculate the average drift velocity of electrons in parts (a) and (b). (µn=1350 cm2/volt-s)
A silicon sample is supporting an electric field of −1500 V/cm, and the mobilities of electrons and holes are 1000 and 400 cm2/V·s, respectively. What are the electron and hole velocities? If p=1017/cm3 and n=103/cm3, what are the electron and hole current densities?
What length of around copper wire of diameter 1mm will have a resistance 1K ohm if copper conductivity is 60 (ohm.m). A cylindrical piece of silicon having a diameter of 1mm doped with 10 ^ 20 / m ^ 3, atoms of phosphorous which are fully ionized. What length of this silicon would be required to give a resistance of 1K ohm if electronic mobility in silicon is 0.1m ^ 2? /V.Sec. ?
Chapter 3 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 3.1 - Prob. 3.1ECh. 3.2 - Prob. 3.2ECh. 3.2 - Prob. 3.3ECh. 3.3 - Prob. 3.4ECh. 3.3 - Prob. 3.5ECh. 3.3 - Prob. 3.6ECh. 3.4 - Prob. 3.7ECh. 3.4 - Prob. 3.8ECh. 3.4 - Prob. 3.9ECh. 3.5 - Prob. 3.10E
Ch. 3.5 - Prob. 3.11ECh. 3.5 - Prob. 3.12ECh. 3.5 - Prob. 3.13ECh. 3.6 - Prob. 3.14ECh. 3.6 - Prob. 3.15ECh. 3.6 - Prob. 3.16ECh. 3 - Prob. 3.1PCh. 3 - Prob. 3.2PCh. 3 - Prob. 3.3PCh. 3 - Prob. 3.4PCh. 3 - Prob. 3.5PCh. 3 - Prob. 3.6PCh. 3 - Prob. 3.7PCh. 3 - Prob. 3.8PCh. 3 - Prob. 3.9PCh. 3 - Prob. 3.10PCh. 3 - Prob. 3.11PCh. 3 - Prob. 3.12PCh. 3 - Prob. 3.13PCh. 3 - Prob. 3.14PCh. 3 - Prob. 3.15PCh. 3 - Prob. 3.16PCh. 3 - Prob. 3.17PCh. 3 - Prob. 3.18PCh. 3 - Prob. 3.19PCh. 3 - Prob. 3.20PCh. 3 - Prob. 3.21PCh. 3 - Prob. 3.22PCh. 3 - Prob. 3.23PCh. 3 - Prob. 3.24PCh. 3 - Prob. 3.25PCh. 3 - Prob. 3.26PCh. 3 - Prob. 3.27PCh. 3 - Prob. 3.28PCh. 3 - Prob. 3.29P
Knowledge Booster
Learn more about
Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.Similar questions
- Suppose that NA(x) = No exp(−x/L) in a region of silicon extending from x =0 to x = 8μm,where No is a constant. Assume that p(x) = NA(x). Assuming that jp must be zero in thermale quilibrium, show that a built-in electric field must exist and find its value for L =1 μm and No =1018/cm3.arrow_forwardSilicon is doped with ND= 2 × 1015 impurity atoms/cm3 . Assume the electron and hole mobilities for the given impurity are un = 1320 cm2 / V.s, and up=460 cm2 /V.s respectively. Use ni = 1.5 × 1010/cm3 Calculate the resistivity of silicon. Assume an aluminum line runs diagonally from one corner of a 20 mm × 20 mm silicon material to the other corner. What is the resistance of this line if it is 1 μm thick and 5 μm wide? The resistivity of pure aluminum is 2.82 μΩ-cm.arrow_forwardSilicon wafers are made to create the most groundbreaking invention of mankind - microprocessors. If two silicon wafers (assume dipoles), both with masses of 125grams, radii of 10cm and thickness of 7μm are placed close to each other, separated by distance of 3cm, what is the electric field strength experienced by an electron placed on the surface of the negatively charged wafer? What is the final velocity of the electron upon reaching the positively charged plate? How much power is generated by the electron in its travel?arrow_forward
- A sample of n-type silicon semiconductor has the following properties:Donor density Ndis 5x1019per cm3Mobility of electron is 1500 Mobility of hole is 500Electron charge q = 1.602x10-19coulombs.Intrinsic carrier density ni= 1.45x1010per cm3a)Find the density of holes and electrons in this sampleb)Find the conductivity of the given sample if the. c)What is the resistivity of the given sample?arrow_forwardconducting line on an IC chip is (2.8 mm) long, and has a rectangular cross-section (1x 4 um). A current of (5 mA) produces a voltage drop of (100 mV) across the line. Determine the electron concentration given that the electron mobility is (500 cm²/V.Sec.).arrow_forwardDensity of state of copper The Density of state for copper 8.9 gm/cm^3 Q1)Find and explain: a-The fermi level is located at........b-The energy gap = Q2)Choose and explain: a-The boud gap is (small-big)b-This means that copper is a(conductor-semiconductor-)arrow_forward
- A silicon wafer is doped n=1.0*10^16cm^-3 with Boron .Find answers for temperature T=0K and T=300K respectively.(1) Is this substance a conductor, an insulator or a semiconductor?If it is a conductor, is it P or N?(2) What is the concentration of electrons and holes?(3)Where is the location of Fermi energy? How far is it from the valence band? Draw an energy band diagram.arrow_forwardIn a n-type semiconductor, the electron concentration increases linearly along the x-axis from 10^16 cm^-3 at x=0 (point A) to 5x10^20 cm^-3 at x=0.5cm (point B). In the absence of any external applied electric field, estimate the approximate diffusion current density and its direction (A to B or B to A). Assume that the electron diffusion constant, Dn = 10cm^2/s.arrow_forwardAn n-type semiconductor sample has an electron density of 6.25 x 10 ^ 18 / cm ^ 3 at 300K. If the concentration of the carriers in this example is 2.5 x 10 ^ 13 / cm ^ 3, what is the hole density at this temperature?arrow_forward
- An n-type semiconductor sample has an electron density of 6.25x10^18/cm^3 at 300K.If the additive-free concentration of the carriers is 2.5x10^13/cm^3, what is the hole density at this temperature?arrow_forwardA copper wire of 3mm diameter with conductivity of 5.8 * 10 '(22.m)', and electron mobility of 0.0032 m V.Sec. is subjected to an electric field of 30mVm. Find (a) the charge density of free electrons, (b) current flowing in the wire, (e) the electron draft velocity.arrow_forwardconsider a silicon pn junction of doping concentrations of 5*10^16 cm-3 and 2*10^15 cm-3 at the p-side and n-side respectively if the pn-junction is forward biased y a voltage V=0.5 V considering a steady state. i) solve the continuity equation in the p side to find the electron concentration as a function of distance x . ii) find the electron current density Jn in the p-side at a distance 10 nm from the edge of the depletion layer.arrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
- Power System Analysis and Design (MindTap Course ...Electrical EngineeringISBN:9781305632134Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. SarmaPublisher:Cengage Learning
Power System Analysis and Design (MindTap Course ...
Electrical Engineering
ISBN:9781305632134
Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma
Publisher:Cengage Learning
What is an electric furnace and how does it work?; Author: Fire & Ice Heating and Air Conditioning Inc;https://www.youtube.com/watch?v=wjAWecPGi0M;License: Standard Youtube License