Why the collector of BJT is made ?bigger than emitter
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![Why the collector of BJT is made
?bigger than emitter
to inject more electrons to the
emitter
to reduce the leakage current O
to attract high number of electrons
to increase the leakage current O
In an n-channel JFET, when applied
VGS = OV and VDS > VP (pinch-off
voltage) the drain current is](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F28fa0308-7b3f-415f-83f0-15cbdd7ab105%2F3c34e057-adf1-4dbe-b976-d066bd0b74cb%2Fxt922u_processed.jpeg&w=3840&q=75)
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