What is the zero-bias junction capacitance per cm2 for a diode with NA =1018/cm3 on the p-type side and ND = 1015/cm3 on the n-type side. What is the diode capacitance with a 9 V reverse bias if the diode area is 0.02 cm2?
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What is the zero-bias junction capacitance per cm2 for a diode with NA =1018/cm3 on the p-type side and ND = 1015/cm3 on the n-type side. What is the diode capacitance with a 9 V reverse bias if the diode area is 0.02 cm2?
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- How is a solid-state diode tested? Explain.What is an ideal diode? The ideal diode acts as an open circuit for forward currents (with voltage greater than the diode's forward voltage) and as a short circuit with reverse voltage applied The ideal diode acts as a short circuit regardless of forward voltage or reverse voltage applied The ideal diode acts as a short circuit for forward currents (with voltage greater than the diode's forward voltage) and as an open circuit with reverse voltage applied The ideal diode acts as an open circuit regardless of forward voltage or reverse voltage appliedHere are some statements about a p-n junction diode. Some are TRUE and some are FALSE. i. Applying a negative bias to the p-side and a positive bias to the n-side allows a forward current flow. ii. When the p-n junction is under reverse bias, the Fermi level is continuous across the junction. iii. The forward bias current is made up of holes from the p-side and electrons from the n-side flowing across the junction. iv. Under reverse bias, you can get minority electrons flowing from the p-side to the n-side of the junction. v. To get a large built-in voltage, you need to heavily dope the p-side and n-side of the junction. vi. The built-in voltage (or contact potential) of a p-n junction is typically twice the value of the band-gap of the semiconductor. Which of the following statements is correct: (i) and (ii) are both FALSE (ii) and (v) are both FALSE (iii) and (vi) are both FALSE
- Consider a silicon pn junction diode at T 300K. The reverse saturation current is Is = 10-14 A and the ideality factor n = 1. Determine the diode current for a diode voltage of VD = 0.573 V and use that to determine the DC and AC resistance of the diode. RDC = 14.13 k rac = 639 Q RDC = 234 Q2 = rac=8Q RDC = 7.00 KQ rac = 307 Q RDC = 1.43 kQ rac = 58 Q3: Using silicon diode design a clamper that will produce output V,-20Sin wt+10 (v) when the input voltage is Vo=20Sin wt-10 (V).Draw the circuit diagram and the input and output signals. 4:The 6-V zener diode has a maximum rated power dissipated of 690 mw.Its reveres current must be at least 3mA to keep it in breakdown. Find a suitable value for Rs if V; can vary from 9v to 12v and Ri. can vary from 5000 to 1.2KO.For the circuit shown in the figure below, consider the diode as an ideal diode & R.M.S value of source voltage as Vs. The output voltage waveform at R is most likely to have zero value in the positive half cycle and a peak value of 1.414Vs in the negative half суcle sine-wave nature with a peak value 1.414VS zero value in the negative half cycle and a O peak value of 1.414Vs in the positive half сycle O sine-wave nature with a peak value Vs
- A silicon diode with a forward resistance of 100 is connected in series with a 5000 resistor. If an a.c voltage of 20V peak is connected across the series combination of the diode and the resistor what will be the peak value of the current through the diode and the peak output voltage? What will be the peak value of the current through the diode and the peak output voltage if the diode were ideal?Consider a silicon P- N step junction diode with Nd = 1018 cm-3 and Na = 5 × 1015 cm-3 . Assume T=300K. Calculate the capacitance when it is under reverse biased at 1.5V. Assume a cross sectional area of 1um2. If you want to make the capacitance decrease by factor of 3 what should be the width of the depletion layer?What is the zero-bias junction capacitance/cm2 for a diode with NA = 1018/cm3 on the p-type side and ND = 1020/cm3 on the n-type side? What is the diode capacitance with a 3-V reverse bias if the diode area is 0.05 cm2?
- Determine the negative resistance for the tunnel diode in the figure between ?T = 0.2 ? and ?T = 0.4Capacitance per unit area at no reverse bias is two pF/cm². For a step graded diode of area 5cm², what is net capacitance at 99 V reverse bias voltage?Consider an abrupt junction PN diode with Na = 5x105 cm-3 and Nd = 2x10" cm-3 at T=300K. What is the applied bias voltage for high level injection?