Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN: 9780133923605
Author: Robert L. Boylestad
Publisher: PEARSON
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- J Vcc 8 Rc - Vout VinoKQ₁ = CL For the circuit above, Q₁ is in active mode and ignore early effect. Let Ic1=1mA, Rc-250ohm, C₁=1nF. Assume V+-25mV, the small-signal voltage gain close to DC should be V/V. It DC gain at the corner frequency is dB and its corner frequency is Mrad/sec.arrow_forwardTrue or False? For good amplifier design, transistors are biased in the knee part of the IV-Curves. The most fundamental parameter in characterizing the small-signal linear operation of a transistor is the transconductance gm. When a resistance is connected in series with the source (or emitter), the Hybrid-Pi model is the most convenient to use. Discrete-circuit amplifiers predominantly employ MOSFETs while IC amplifiers predominantly uses BJTs. The basic gain cell of IC amplifiers is the CS (CE) amplifier with a current-source load. The MOS current mirror has a current transfer ratio of (W/L)1/(W/L)2. The internal capacitances of the MOSFET and the BJT cause the amplifier gain to rise at high frequencies. The internal MOSFET capacitances that must be considered when evaluating the frequency performance are the gate capacitances and the junction capacitances. Channel modulation causes Id to increase in the saturation mode. When Vgs=Vt, the channel charge beneath the gate is inverted.arrow_forwardThree resistors are connected in parallel namely R1, R2 and R3. It is impressed by a source voltage of 120V. If R1 receives 15W while R2 carries a current if 100mA, what should be the value of resistance R3 if the power supplied by the voltage source is 60W? a. 364.4 ohmsb. 436.4 ohmsc. 43.64 ohmsd. none of thesearrow_forward
- Vi RB Vcc Rc our A BJT (B=200) is implemented in an amplifier circuit, with a VCC of 15 volts. One wishes to set the Q point at IC = 5.76 mA and VCE = 6.73 volts (DC). Determine RB.arrow_forwardConsider the circuit depicted in the figure shown below. This circuit is designed using a silicon bipolar junction transistor (BJT) with a forward current gain BF = 100, and two resistances RB = 1kN and Rc = 1kN. The supply voltage is Vcc = 10 volts. The currents Ig and Ic designate the base and collector currents, respectively, whereas the voltage VCẸ denotes the voltage between collector and emitter. Vcc = 10 volts Rc =1 k2 Rg = 1 k2 VCE GND Throughout this question, you will use VBE,on = 0.7 volt and VCE,sat = 0.2 volt. Recall that VBE.on is the threshold voltage of the base-emitter junction, while VCE.sat represents the voltage that is measured between collector and emitter when the BJT is saturated. a) What is the value of the base current In? Please enter the value expressed in milliamperes (mA) in the box below. For instance, if you think that IR = 0.1 A, enter 100 in the box. If you think that Ip = 10 mA, enter 10 in the box. mas-numbas-Iti.ncl.ac.uk Submit part Unanswered b)…arrow_forwardI need the answer as soon as possiblearrow_forward
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