A one-sided abrupt silicon p-n junction diode is to be designed to have a breakdown voltage of at least 60 V and to have a forward-bias current of 50 mA for an applied voltage of 0.625 V while still operating under low injection. The minority carrier lifetimes are To = Tno = Tp0 = 2 x 10-7 sec. Determine the doping concentrations and the minimum cross-sectional area.

A semiconductor diode having ideal forward and reverse characteristics is used in a half-wave rectifier circuit supplying a resistive load of 500 ohm. If the r.m.s. value of the sinusoidal supply voltage is 230 V, determine (i) the r.m.s. diode current and (ii) power dissipated in the load.

A room temperature small-signal silicon diode has a measured forward voltage drop of 0.61 V at 1.0 mA of forward current flow. Using the Shockley equation, calculate the estimated new forward current in mA to one decimal place for a measured voltage drop of 0.71 V assuming the diode is at room temperature.