Silicon (Si) is an intrinsic semiconductor with a band gap of ~1.1 eV. Increasing temperature has been shown to increase its conductivity. Estimate the order of magnitude increase in the electrical conductivity of Si when its application temperature is increased from 25 °C (ambient temperature) to 425 °C. Is this temperature effect mostly due to the change in concentration or the mobility of the charge carriers in Si?

Silicon (Si) is an intrinsic semiconductor with a band gap of ~1.1 eV. Increasing temperature has been shown to increase its conductivity. Estimate the order of magnitude increase in the electrical conductivity of Si when its application temperature is increased from 25 °C (ambient temperature) to 425 °C. Is this temperature effect mostly due to the change in concentration or the mobility of the charge carriers in Si?

Delmar's Standard Textbook Of Electricity

7th Edition

ISBN:9781337900348

Author:Stephen L. Herman

Publisher:Stephen L. Herman

Chapter1: Atomic Structure

Section: Chapter Questions

Problem 6RQ: How many valence electrons are generally contained in materials used for insulators?

See similar textbooks

Similar questions

How many valence electrons are generally contained in materials used for insulators?
1 (b) When Ef touches intrinsic Fermi energy Eri, comment on whether an extrinsic semiconductor will stay extrinsic or not. What will be ultimate state of semiconductor in this case?
a) Explain the band structure of an electrical conductor (metal), a semiconductor, and an insulator at 0 K by showing the valence and conduction bands and fermi energy levels. Explain how the electrical conduction takes place in these three types of materials. Give an example for each type of material. b)Explain what n and p-type semiconductors are using their band structures.
How many valence electrons does a semiconductor has? a. 2 b. 3 c. 6 d. 4 When pure semiconductor is heated, its conductance a. Goes up b. Goes down C. Remains the same d. Can't say When a trivalent impurity is added to a pure semiconductor, it becomes a. A conductor b. An intrinsic semiconductor C. P-type semiconductor d. N-type semiconductor
Calculate the hole and electron densities in a N-type germanium semiconductor at room temperature. The conductivity of semiconductor bar is 500 S/cm. The mobility of electrons and holes at room temperature for germanium is 3800 cm2 /Vs and 1800 cm2 /Vs respectively and ni= 2.5 × 1013/cm3
The equilibrium electron and hole concentration for a semiconductor is 3x1017/cm3 and 2800 /cm3. Estimate the intrinsic carrier concentration of the semiconductor.
Which of the following ratings (PIV- Peak Inverse Voltage and temperature) is true? Si diodes have lower PIV and narrower temperature ranges than Ge diodes. O Si diodes have lower PIV and wider temperature ranges than Ge diodes. Si diodes have higher PIV and narrower temperature ranges than Ge diodes. O Si diodes have higher PIV and wider temperature ranges than Ge diodes. To increase the electrical conductivity of an intrinsic semiconductor, we need to add impurity increase the resistivity apply heat None of the them
Q. Calculate the hole and electron densities in a N-type germaniumsemiconductor at room temperature. The conductivity of semiconductor bar is 500 S/cm. The mobility of electrons and holes at room temperature for germanium is 3800 cm2/ Vs and 1800 cm2/ Vs respectively and ni= 2.5 × 1013/cm3.
When a pentavalent impurity is added to a pure semiconductor, it becomes ......... 1. An insulator 2. An intrinsic semiconductor 3. p-type semiconductor 4. n-type semiconductor
Find the effect on the resistance in a semiconductor due to charge carriers.
A. Why does the conductivity of a semiconductor and some insulators change with impurity content? Compare this with the behaviour of metallic conductors. B. Discuss the location of the Fermi levels of intrinsic and extrinsic (n-type and p-type) semiconductors in low temperature and high temperature ranges. C. Discuss why the structure of the p-n junction is so important to modern technologies that impact our daily life.
Diodes D1, D2, D3 and D4 are identical Silicon diodes with forward voltage drop of 0.7volts. Consider vi to be the circuit's input voltage.A) Under what input conditions will diode D1 conduct? B) If D1 is conducting, express vo in terms of vi. C) Under what conditions will diode D4 conduct? D) If D4 is conducting, express vo in terms of vi. E) Under what input conditions will none of the diodes be conducting? F) If none of the diodes are conducting, what is vo? G) The input to the circuit has the waveform shown below. Plot the waveform of thevoltage vo. Show all the important quantities in your plot.