Ry C2 C1 RC Q1 RE R1 R2
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Q: Question 1: Design the Feed-back bias cireuit shown below. Vcc = 3V, Ic = 3 mA, Vc = Vcc/2, VBE =…
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A: C1=22μFRL=1.2kohmVs=9sin2π50tV
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Q: Vec =14 Bi=139k Rc=3k %3D Re Rz= 50M Resl,5k Rz Find: IB Is Jr A
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Q: Determine Ic in the given circuit if VBB = 10V, VCC = 15V, RB = 10kΩ and RC = 110 Ω. Assume β = 100
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Q: Determine Rc, Rg, Rg, Vceq, & VB 12V Ic = 2 mA RB 7.6 V ß = 80 B VcE E 2.4 V RE Show the details of…
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Q: 4. Given Vcc=100V, R,=2002, R;=1002, B=100, VBB-5V. Flip the switch to CC close 1) Determine Ip. 2)…
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Q: Q1/D:-The Si transister B = 100 , Rc = 2 kn and Vcc = 12V, VCEQ = Vcc/2 a-determine RF. %3D %3D
A: Dear student as per our guidelines we are supposed to solve only one question.kindly repost other…
Q: Solve the beta (B) of Figure 611. VCC T18V R2 3.9kQ R1 www 680KQ Vc = 8V Figure 611
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Q: Ry C2 RC:1.0S L RE = 3.15L Vcc =-14.00V RI =17.7OL R2 =84.06k2 IVBE =0-7V B= 176.00 Ic=?
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Q: D4 D1 C1+ RL 22µ 1.2K "s D3 YD2 eV sin(2n 50 t) 2)
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Q: Determine: (a) Zin (b) Zo (c) Io if Vs=0.5mVp-p (d) Avs=Vo/Vs
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Q: vt-5V R, Re Rz V=-3 Q Zoom image If you Know: RC 2 kohm, R1 - 90 kohm, R2 = 10 kohm. For the…
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|VBE| = 0.7V, R1= 5.13Kohm , R2=16.25Kohm , RC= 1.01Kohm , RE= 3.03Kohm , VCC= 9.00V, Beta=160.00
IC find its flow through full analysis=?
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- (02) DC Si Diode Circuit. (Course: Electronic Devices and Circuit Theory) What is the minimum value for RL needed to turn Zener diode ON?, And what is the maximum value for RL needed to turn Zener diode is ON? -Use Equation Operators or write it down on paper/digital paper. -Redraw and Apply. -You can add //comments for a better understanding. -Please answer without abbreviation. -Make it clean and clear typing/writing. Thank you.b) Use the ALU 74181 in the figure below and the tables (one is enough; second maybe, need to check the new kit) to implement : A + B, A – B, A. B. (MSB) (LSB) 10 (MSB) F3 F2 F1 FO S3 Cn+4 16 s2 20 U14 15 S1 14 so A3 A2 A1 AO B3 B2 B1 B0 M Cn 24 23 22 21 28 27 T26 25 (LSB) (MSB) (LSB)(MSB) (LSB) And given that under M = 1 the circuit performs the following arithmetic and logic functions according to Table 11.1. Input selection S3 Output M-H S2 SI Cn=L. F3 F2 F1 FO A 1 -A В -B A&B AxB 1 A'B 1 Ax(-B) (-A)xB (-A)x(-B) 1 1 ACTIVE HIGH DATA M-L: ARITHMETIC OPERATIONS SELECTION M-H LOGIC s3 s2 s1 so Ino carry) (with carry) F-A PLUS 1 F- LA + B) PLUS 1 F- (A + BI PLUS 1 FUNCTIONS L L F-A F-A+B F-AB F-A H FA+B F-A+T F- MINUS 1 12s COMPL) F-A PLUS AB F- IA + BI PLUS AB L L L L F-0 F-ZERO F- AB F-A PLUS AB PLUS 1 F- (A + BI PLUS AB PLUS 1 L L L H L F-AOB F- AB L L F-A MINUS B MINUS 1 F-A MINUS B F- AB MINUS 1 F- A F-A PLUS AB PLUS1 F-A PLUS B PLUS 1 F- IA + B PLUS AB PLUS 1 L H L F-A PLUS AB…FAIRCHILD Discrete POWER & Signal Technologies SEMICONDUCTOR ru 1N4001 - 1N4007 Features • Low torward voltage drop. 10 a14 * High aurge eurrent cepablity. 0.160 4.06) DO 41 COLOR BAND DGNOTEs CAT-Cos 1.0 Ampere General Purpose Rectifiers Absolute Maximum Ratings T-26*Cuness atnerwioe rated Symbol Parameter Value Units Average Recttied Current 1.0 375" lead length a TA - 75°C Tsargei Peak Forward Surge Current 8.3 ms single halr-sine-wave Superimposed on rated load JEDEC method) 30 A Pa Total Device Dissipetion 2.5 20 Derste above 25°C Ra Tag Thermal Resistence, Junction to Amblent 5D Storage Temperature Range 55 to +175 -55 to +150 Operating Junetion Temperature PC "These rarings are imithg valuee above whien the serviceatity or any semiconductor device may te impaired. Electrical Characteristics T-20'Cunieas ofherwise roted Parameter Device Units 4001 4002 4003 4004 4005 4006 4007 Peak Repetitive Reverse Vellage Maximum RME votage DC Reverse Voltage Maximum Reverse Current @ rated VR…
- PUT THE Fouawwb OPENAIONS IN THE CocRECT OnDER N ORDER TO FABRICATE A SCHOTTKY DeoDE ON n t SUBSTRATE. PROPER OCDER A EXPOSE SCHOTTKY METAL LIFT OFF SHOTTEY METAL CLEAU SAMPLE D MEASURE DEUICE E CLEAN SAMPLE ANNEAL OHMIC METAL G DEPOSIT BACKSIDE OHMIC METAL DEPOSIT SCHOTTLY METAL CLEAN SAMPLE 3 DEVELOP SatoTTy METAL SPIN COAT NEG. RESISTDevices that pass the signal from its source to the measurement device without aphysical connection by using transformer, optical or capacitive coupling technique arecalled?Select one a. bridgesb. isolatorsc.filters d.rectifiers1. SP=F002H; after PUSH BX, what is the value of SP?
- The datasheet shown below for a group of commercial Zener diodes, according to the datasheet the typical voltage and leakage current of the Zener diode with model number 1N4732A are: * Tolerance- S% FAIRCHILD SEMICONDUCTOR Datasheet 1N4728A - 1N4758A Zener Diodes D0041 Glass case Electrical Characteristics 1,-25°C untess otherwise noted Vz (V) @ Iz (Note 1) Max. Zener Impedance Leakage Current Test Current Device Zz@lz ZzK @ IZK (mA) IR (HA) VR (V) Min. Тур. Мах. Iz (mA) (오) Izk (2) 3.315 3.42 1N4728A 3.3 3.465 76 10 400 1 100 1 1N4729A 3.6 3,78 69 10 400 100 1N4730A 3.705 4.085 3.9 4.095 64 9 400 50 1N4731A 4.3 4.515 58 400 10 1N4732A 4.465 4.7 4.935 53 500 1 10 1 1N4733A 4.845 5.1 5.355 49 550 10 1 1N4734A 5.32 5.6 5.88 45 600 10 1N4735A 5.89 6.2 6.51 41 2 700 1 10 3 1N4736A 6,46 6.8 7.14 37 3.5 700 1 10 1N4737A 7.125 7.5 7.875 34 4 700 0.5 10 b. 1V and 10uA O c. 4.7V and 10uA a. 4.465V and 10UA O d. 4.7V and 53mA14 A0-volt forward voltage is applied to a silicon diode in series with a kond of 3 k2. Draw ihe de kud line. What is the slope of the line? Selution The value of voltage Vy across diode is given by Vy v- lR Since R and V are fixed values, this nquation can by represented by a straight line on V-ly characteristics of diode; thn is de kud foe. When I 0, maximum voltage across the diode V 30 V. This is point BC30, 0). 10 mA 30 V Fig. 2.25 Problem 2.4.Q 2) A single phase half-wave uncontrolled rectifier with RL load is shown With R=1002, La 0. 1H w-377rad/s and V 100V, Determine: a) An expression for the load current i(t). b) The value of the current at t3D16 ms. c) The average load current (1C WLialx197=ア7.9 =121 V, = V, sinfar) 17.2 0.360
- A. Determine V1 without C B. Determine V1 and VR with C C. From aB Determine V2, IL, PD D. From B determine the efficiency of the regulator (OUR SUBJECT IS INDUSTRIAL ELECTRONIC)The converter below: diodes are ideal; L is large that ide is constant at Ide. S, S2 S3S4 İdc Va ia L Ve i 3R S5 S6A S, S8 1) Draw the waveform of i, ih, iç and ig. Vb Vc Vd -Vm 2) Determine the maximum voltage stress and maximum current stress of the diode S2.Q-3. Draw 1-V characteristics of 5 V silicon zener diode (Vz-5V) and show its parameters V Vz, Izx. Izs, Izm on the curve. Q-4. Determine the range of Road (Rmin, Rmax) that will maintain Vz at 5 volts for the circuit given below. Rs m 1.0kg V1 40 V Pzm=150mw