QUESTION: 1 Silicon at T=300K contains a acceptor impurity concentration at Na=10" cm-. Determine the concentration of donor impurity atoms that must be added so that the silicon is n-type and the Fermi energy is 0.20eV below the conduction band edge. (Take NC=2.8 x 10"cm').

3) In a p-n junction diode, the reverse saturation current (I,) is ... diode forward-bias voltage is VD =0.5 V at 27°C. (k = 1.38 x 10-23 n= 1 (ideality factor) q = 1.6 x 10-19 C) K Take I, is = 6,175 x 10-10 A 3.a) Determine the diode current (I,). 3.b) Determine the diode current (I,) when the diode forward-bias voltage VD =0.6 V at 27°C. 3.c) What is the dynamic or AC resistance (ra) of diode according to diode current change?

Intrinsic carrier concentration of pure silicon at 300 K will be .................?

Capacitance per unit area at no reverse bias is two pF/cm2. For a step graded diode of area 5cm2, what is net capacitance at 99 V reverse bias voltage?

Consider an n-type silicon for which the dopant concentration is ND = 1016 cm-3.  Find: a) The electron and hole concentration at T = 300K b) Repeat for T = 500K

Consider silicon at T =300 k is doped with donor impurities No = 2.8 × 101⁹ atoms / cm3 and Nc -2.8×101⁹ cm-³ 1. Draw the energy band diagram for this semiconductor and label all the energy levels? 2. What is the type of semiconductor?