Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN: 9780133923605
Author: Robert L. Boylestad
Publisher: PEARSON
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- The LED in Figure shown requires 30 mA to emit a sufficient level of light. For the following circuit values, determine the resistance of RC and the amplitude of the square wave input voltage necessary to make sure that the transistor is in Saturation. [VCC= 9 V, VCE(sat) = 0.2 V, RB = 3.3kQ, BDC= 50, and VLED= 1.8 V] RC (in ohm) Vn = ..( in volt) respectively +Voc 233, 2.7 133,2.5 220,3 1000,5 ON ON RB OFF Rearrow_forwardA Bipolar junction Transistor with curreat amplification factor being 100, Input Base current is 50μA. Collector voltage is 10 V and biasing voltage being +20 V. Find followings a. Collector current b. Resistance (R1) c. Collector voltage , Emitter voltage , Base Voltage & Collector-Emitter Voltage.arrow_forwardA certain npn silicon transistor has vBE=0.7 V for iB=0.1 mA at a temperature of 30°C. Sketch the input characteristic to scale at 30°C. What is the approximate value of vBE for iB = 0.1 mA at 180°C? (Use the rule of thumb that vBE is reduced in magnitude by 2 mV per degree increase in temperature.) Sketch the input characteristic to scale at 180°C.arrow_forward
- Discussion 1. Calculate the theoretical DC voltages and currents for the transistor bias circuit and compare them with the practically measured values. Table-1: Measured Quantities for the DC Bias Circuit Parameter B VB VE Vc Icọ VCEQ VBEQ Te Value 65.63 1.20 0.58 7.32 1418mA 6.74 0,62 18.3356 ECTR Vcc +12V R5 R3 3.3kQ всз37 R2 R4 4.7kQ 4700 Figure 5: The DC Bias Circuit of the Common Emitter Amplifierarrow_forwardRB= 430 kilo ohmarrow_forward6) the "simplest" model of transistor behavior in this problem, i.e., B = o and IB = 0, with forward bias voltage of AVBE = 0.6V. Consider the following circuit with a transistor and two resistors. You may use 5V a) Determine the output when Vin = 0.5V. 9kN Vout Vin 3002 3kN b) Determine the output when Vin = 1.2 V. c) Determine the output when Vin = 3.6 V.arrow_forward
- Choose the correct option. 1. When operated in cutoff and saturation, the transistor acts like a a) linear amplifier b) switch c) variable capacitor d) variable resistor 2. A circuit contains two un-equal resistances in parallel a) current is same in both b) large current flows in larger resistor c) potential difference across each is same d) smaller resistance has smaller conductance 3. Which of the following is true for a bipolar junction transistor a) IB is controlled by RB b) IB is controlled by VBB c) VCE is controlled by IB d) IC is controlled by IB e) All of the above 4. Which of the following are made of transistors a) Integrated Circuits (ICs) b) Microprocessors c) Logic Gates d) All of the above 5. Multisim is used for a) Programming b) Inserting multiple sims into a software c)…arrow_forwardDetermine in which mode (depletion, enhancement or neither) each D-MOSFET in the figure below.arrow_forward........ (Figure-1) R. RB= 380kN,Rc= 1kN B = 100, VBB = Vcc=12V RB ww Vec CC ......... I, V CE СЕ V ВЕ BB Q-1-b) Describe briefly the input / output characteristics and application of Common Emitter BJT Configurationarrow_forward
- Please answer in typing format please ASAP for the like please clear the solution of above question is given to Please answer in typing format please ASAP for the like pleasearrow_forwardMost of the following statements about integrated circuits arecorrect, but one is not. Which statement is NOT true? Select one: a. Transistors are constructed in a small area of an integrated circuit,and are connected to other transistors by wires that are embedded inthe integrated circuit b. Wires that carry signals may be embedded in a substrate without a shortcircuit because a short circuit would require a signal to cross areverse biased junction c. Each transistor on an integrated circuit is manufactured individually,one at a time d. An integrated circuit contains several layersarrow_forwardA base bias method is used in the following circuit. For Bpc - 300, the value of emitter current is: -Vc. +15 V Rc 1.8 k2 RB 560 k2 7.82 mA O 6.84 mA O 7.27 mAarrow_forward
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