Q4: Determine the position of the intrinsic Fermi level with respect center of the bandgap in GAAS at T=300K. m,=0.067 mo, m,=0.48 mo (Ans: -38.2meV)

A silicon pn junction at T=300k is reverse-biased at VR= 8 volt. The doping concentration are NA=5x1016 cm3 and No=5x1015 cm3. Determine Determine Xn, Xp, w and /Emax|. Assume n=1.5x1010 cm3, Es=11.9.

You have a semiconductor layer of GaAs that is doped with acceptors to a level of 1x1023 m-3. The band-gap energy of GaAs is 1.42 eV and the intrinsic carrier concentration (hi) at 300K is 2x1012 m-3. Some of the following statements regarding this semiconductor are TRUE and some are FALSE. i. At 300K the semiconductor has 1x1023 m-3 holes. ii. At 300K the semiconductor has 1x1023 m-3 electrons. iii. The minority carrier type in this semiconductor is electrons. iv. The minority carrier type in this semiconductor is holes. v. The electron concentration at 300K in this semiconductor is 2x1012 m-3. vi. The electron concentration at 300K in this semiconductor is 2x1035 m-3. vii. Increasing the temperature to 400K will cause the acceptor concentration to increase. viii. Increasing the temperature to 400K will cause the intrinsic carrier concentration to increase. Which of the following statements is correct: (ii) and (viii) are FALSE (iii) and (v) are FALSE (v) and (viii) are FALSE (v) and…

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