Find the position of the Fermi energy level relative to the intrinsic level of the Si semiconductor at 300 K in units of eV if the probability of finding holes in energy states at Ey – 2kT is equal to 0.6.

Subject - Semi Conductor's At 300K, fermi level is found to be 0.2eV below the edge of conduction band for an n-type silicon semiconductor. Find the electron and hole concentrations. After doping again, fermi level is now founded 0.25eV below the edge of conduction band. Find the type and concentration of impurity atoms added at the later stage At 300K, Nc= 2.8x 1019 cm3

1. Determine the electron and hole thermal equilibrium densities and the location of the Fermi level, with respect to Ec, for a silicon sample at 300 K that is doped with a) 1x10¹5 cm3 of boron. b) 3x10¹6 cm3 of boron and 2.9x10¹6 cm²³ of phosphorus.

(When the energy gap value of the semiconductors between the valence band and the conduction band is listed from large to small, it is ..........)

A silicon diode is in connected to a DC voltage source with Forward biased, the net currentflowing through the diode is (25mA) where the applied voltage across the terminals of thediode is (820mV). Determine diode temperature, if Is "dark saturation current", the diodeleakage current density in the absence of light is 3.4 × 10−10 A

Make a sketch of the I–V characteristic curve for a diode with Is = 0.02 pA for VD values from zero to 0.7 V. Use the approximation ID = Is e^(Vd/VT) What is the slope of a line tangent to the curve at ID = 2 mA?

In a N-type semiconductor, the positive of the Fermi level O a. Is lower than the centre of energy gap O b Can be anywhere depending upon the doping concentration C. Is higher than the centre of energy gap Od. Is at the centre of the energy gap Clear my choice e Proiect Jump to:

4. The electron concentration in pure silicon is 1.5×1016 m-3 at 300°K. The silicon was doped with 1022m-3 donor atoms. Find the electron and hole densities after doping and calculate the position of the new Fermi level with to the initial position?

I need the formulas in well written format of text answer please!!

A diode with n =1.6 conducts 45 mA at 0.75V at room temperature. Find the saturation current Is at room temperature (using the exponential model).