Q2: A cubic doped n-type silicon semiconductor sample at T=300 K. Hn=0.85m/V.s, R=10k2, J-50A/cm2' when 5V is applied. Calculate Np. .

Choose the doping material that will cause silicon to become a p-type semiconductor. A. Ge B. As C. Te D. B

For the circuit shown below, the diode cut in voltage is Vy0.7V. Th value of I, varies over the range 0 s l, s 6mA. The Value of R-2.4kn and the value of Ve 4.8V Vo At which value of l, does the diode turn on O a.2.292 mA b. 1.833 mA c. 2.865 mA O d. 1.467 mA If l = 2.1mA, What is the value of Vo O a. 5.04 V O b. 4.03 V O c 6.3 V O d. 3.23 V If l= 1.6mA, What is the value of lo O a. 1.917 mA b. 0 mA O c 0.639 mA O d. 1.278 mA EO o

Q2:Calculate holes and electrons concentration in compensated silicon p-type sample. If T=300 K, N=3×102/m³, Na=1022/m³. Assume that n=1.5×1016/m³.

9..The Diod (semiconductor) has Is (saturation) Current= 0.01(A] and VD = lov find the In weheu the Room andition.

When a pentavalent impurity is added to a pure semiconductor, it becomes O a. An insulator O b. p-type semiconductor O c. n-type semiconductor Od. An intrinsic semiconductor ject Jump to...

3. A metal contact to a n-type semiconductor can be considered as a p*-n junction with NA > ND. Draw an energy band diagram of the contact showing the Schottky barrier eoz and the depletion width d. Then draw the energy band diagram in forward and reverse biased conditions. Indicate how the +V or -V bias affects the contact potential and the depletion width. Explain how the bias changes the forward current due to the injection of electrons from the semiconductor into the metal, and the reverse current Io from the flow of metal free carriers into the semiconductor. Show that the rectifying behavior is just like that in a p-n junction.

Diode circuit...do it...

. A half-wave rectifier is needed to supply 15-V dc to a load that draws an average current of 300 mA. The peak-to-peak ripple is required to be 0.2 V or less. What is the minimum value allowed for the smoothing capacitance?

For pure germanium and pure silicone, the following statements are considered: 1. Direct-band interval semiconductors 2. Indirect-band interval semiconductors 3. Degenerated semiconductors These are:Please select one:a.3 is true on its ownb.2 is true on its ownc.1 is true on its ownd.None of the above