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- Figure 2 4. Consider the circuit in Figure 3. D1 is Gallium arsenide and D2 is Silicon, each has a forward resistance of 500. Determine the following: a. The states of D1 and D2. Explain. b. Current 11 through R1 c. Current 12 through R2 d. Current 13 through R3 e. Voltage Vo Liv Hilt R1 1092 V1 12V (+2) V1 D1 1V 50Hz 0° 1 D1 R2 1592 Figure 3 5. Do number 4 again, but this time reverse both the positions of D1 and D2. 6. Consider the circuit in Figure 4. a. Calculate the voltage across R3 during the positive half cycle of the source voltage V1. b. Calculate the voltage across R3 during the negative half cycle of the source voltage V1. c. Sketch the waveform of the voltage across R3. R1 1kQ V2 9V D2 R3 10092 R2 1k92 D2 Vo R3 1k92Four cells each of 2.10 volt internal emf are parallel connected together to make a battery. The internal resistances are 0.004, 0.005, 0.003 and 0.0025 ohm. Calculate for parallel connections: (a) internal emf and resistance of the single equivalent cell (b) current for a terminal voltage of 1.95 volts, (c)current in each cell3. The figure on the left below shows a schematic diagram of a battery. The voltage measured by U1 is called the terminal voltage given R1 = 1 ohm. In the figure on the right below, the terminal voltage of each of the battery-resistor combination is Vr = 1.5 volts. Find the following: a. The current passing through R5. b. The currents passing through R1 and R3 C. The voltage across R1. d. The voltage of the battery EMF. e. The percentage of voltage loss ot the battery due to the internal resistance R1. The power dissipated by the internal resistance R1. g. The power dissipated by R5 if R1 = R2 = R3 = R4 = 0. h. The percentage of power dissipation loss due to the four resistors R1, R2, R3, and R4 f. R1 R3 S10 R1 U1 1.500 EMF EMF R5 100 V1 R2 $10 EMF R4 EMF EMF
- Given: Vbatt is 14.5V to avoid overcharging the battery. Vbatt falls to 11.4V due to discharge at night. Question: If VB = 8.1V and the minimum current for VB is 0.4mA, what should be the maximum resistance value of RB? (in Ohms)Examine the circuit shown below. For each of the following elements, state how much power they absorb from or deliver to the circuit? (a) The 10 V source (b) The 3 V source (c) The 5500 Ohm resistor (d) The diode 10.0 V 2.89 mA O 3.00 V -1.17 mA 562 mV -1.72 mAFor each of the circuits in Figure 1 calculate the following: a) currents IB, Ic and IE b) Voltages VB, VC and VE
- Question 4) How would the I-V behaviour be of the following cases. Start by explaining what they are: Metal n-type semiconductor CB CB VB VB12. Three resistances of 8, 12, and 24 ohms are in parallel. This combination is in series with an- other parallel combination of 10, 10, and 20 ohms. The whole combination is then connected to a battery of EMF 16.6 volts. If the current through the 20-ohm resistor is 0.4 ampere, (a) what is the internal resistance of the battery? (b) What is the current through the 12-ohm resistor? (c) What is the TPD of the battery?For the network shown in Figure B22 , assume E = 12V, Diode Di as silicon and D2 Germanium, R1=1.5KN and R2=1KQ. Calculate, i. Current I1, ii. Current Ip2, iii. Voltage across resistor R2 R1 D1 E D2 Ip2 I2 R2 Figure B22