Q/ Put (T) in Front of the Correct Sratement and an (F) in Front of the incorrect Statement. 1. Raising the temperature of a Semiconductor is One of +the most imPortant way to Convert it into aConductur. 2. The Study of e lectronics means the Study of the Current behavior of Semiconductor devices. 3- The in crease and decrease in the Value of the resistance Connected with the Light-emitting diocde does not affect it.
Q: 1. A p-type silicon sample with the geometry shown in Figure 5 has parameters L= 0.2 cm, W= 102 cm,…
A: SOlution: Given that L = 0.2 cm W = 0.01 cm d = 8x10-4 cm p =1016 / cm3 Vx = 10 V Bz = 500 Gauss
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A: Intrinsic semiconductor is the purest form of semiconductor
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Q: Q4: Find VL, IL, IZ, IR and PZ for the Zener Diode network shown below:
A: Given, Input voltage,Vi=20 V Resistance,Rs=220 Ω,RL=470Ω Zener voltage,VZ=10 V Zener Power,PZ=400…
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A: Answer : Triac : A triac is a three-terminal semiconductor switching device…
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A: QUESTION :-(1) In saturation mode both emitter and collector npn transistor are forward biased. And…
Q: Q2/ Choose the most appropriate answer: arks) 1- In an intrinsic semiconductor, the number of holes:…
A: 1) in intrinsic semiconductor number of holes is equal to number of electrons............. a 2)…
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Q: Explain in your own understanding why Semiconductors are Negative Temperature Coefficient…
A: To describe: Semiconductors have negative temperature coefficient for resistance.
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A: Maximum wavelength for which electron get excited is, 500 nm = 500 x 10-9 m
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Q: Q3:- A bar of p-type silicon, has a cross-sectional area A =10.s em: and a length I.= 1.2x10 cm. For…
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Q: Explain why Semiconductors are Negative Temperature Coefficient materials?
A: The answer is below
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Q: 1. What do you understand by a semiconductor? Which are the most commonly used semiconductors and…
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- 1. Sketch the atomic structure of copper and discuss why it is a good conductor and how its structure is different from that of germanium, silicon, and gallium arsenide. 2. Describe the difference between n -type and p-type semiconductor materials. 3. Determine the static or de resistance of the commercially available diode of Fig. 1.15 at a forward current of 4 mA. -10 Reverse-hias regian, (V₂<0V.₂) 4A) 20 Eq. (LIP 10 pA 40 pA 50 pa : * . 19 03 0.5 (17 Actud commercially available unit No-bias (VOV.J-0mA) Defined polarity and dinction for graph Vo Forward-hias region V0V, 10 mA) FIG. 1.15 Silicon semiconducir diode characteristics. V (1)1) a) A wire sample (1 mm in diameter by 1 m in length) of an aluminum alloy (containing 1.2% Mn) is placed in an electrical circuit such as that shown in the figure below. A voltage drop of 432 mV is measured across the length of the wire as it camies a 10 A current. Calculate the electrical conductivity of this alloy -Length, / Area, A Sample geometry b) Copper has an electrical conductivity of 58.00 x 106 S/m and a free electron density of 104 x 10²7m²³. Calculate the drift velocity of these electrons under an electric field of 0.5 V/m.Find Vo? ww - R 12 5V Vo Select one: Oa. 5 Ob.-5 Oc. None of them Od.0 e. 4
- B. Draw the circuit diagram of a clipper that will produce an output waveform below. From the output waveform Voltage A is 7.7 and Voltage B is -5.7 .Input peak-to-peak voltage is given as 20 volts. Assume Silicon diodes are used. A B 1. For the positive half cycle, the needed battery voltage is 2. For the negative half cycle, the needed battery voltage isReclung.c A on ri gle Figure 1 2. The circuit shown above is constructed with two 6.0 V batteries and three resistors with the values shown. The currents 1₁, 12, and 13 in each branch of the circuit are indicated. 2 GEOMETRY AND TRIGONOMETRY Circle A = ²² C = 2πr Cy.inder bh - re Rectangular Solid Vlh Sphere 1. Using Kirchhoff's rules, write, but DO NOT SOLVE, equations that can be used to solve for the current in each resistor. ii. Calculate the current in the 200 9 resistor. iii. Calculate the power dissipated by the 200 2 resistor. V = ar²l S.. Figure 2 The two 6.0 V batteries are replaced with a battery with voltage & and a resistor of resistance 50 2, as shown above. The voltmeter V shows that the voltage across the 200 £2 resistor is 4.4 V. (b) Calculate the current through the 50 2 resistor. (c) Calculate the voltage & of the battery. V=² S = 4; 7² Rig Triangle 2 +6² = c² sin = COS== tan 8 = OJA b C 2m. a b 6.0 V 7,4 & A - area C=circumference h-hei £= le L W = IUL r=fuu.0…Q1) Fill in the following blanks : 1. Electrical conduction in gases was first studied in 1905 by.... 2. According to Townsend current growth process the current (1) in a electric field gap is..... 3. The breakdown criterion in a uniform field electric gap is .... 4. An electronegative gas is one in which 5. SF6 is a...
- proplems 1.A single solar cell (10 cm x 10 cm) produces a voltage of 0.5 V and a current up to 2.5 A. If the solar insolation is 800 W/m2, the efficiency of the solar cell is? 2.Calculate the amount of power obtained from a solar site containing 500 solar panels, each It consists of 100 solar cells and calculate the conversion efficiency of the product if you know the amount of solar energy Falling onto a single plate equals 1000 watts. 3. Find the number of cells required to generate power equipped for a product equal to 50 kW and area Required for the solar station if you know that one panel contains 50 solar cells and its area is 1 Square metersDo impurities in semiconducting materials listed in Table 9.1 supply free charges? (Hint Examine the range of resistivity for each and determine whether die pure semiconductor has the higher or lower conductivity.)Activity 7: Finding Current Work with the given sample problem below. (1) Construct an illustration of the given sample problem. (2) Indicate the given data, required quantities, formula, solution, and annotations. Use the space provided for your answers. Working Exercises. Calculate the current flows when a A. Illustration 20000 µC passes in 3 seconds in a 12-m copper wire. PROCEDURES ANNOTATIONS B. Given C. Required Quantities D. Formulas E. Solution F. Answer
- Q2: A Si bar 0.1 cm long and 100um2 in cross sectional area is doped with 1017 cm-3 phosphor. Find the current at 300 k with 10v applied cm? voltage. Hn = 700 (Ans. 1.12mA). v.S1.The Effect of Temperature on Conductivity of Superconductors2. How are conductance and electrical resistance characterized? What is the physical phenomenon that distinguishes conductors, semiconductors, insulators, and superconductors? In metals, how is conductivity affected by defects, temperature, and deformation?5. In semiconductors, how is conductivityaffected by impurities (doping) and temperature?6. Phosphorous is added to high purity silicon to produce a1023 ?3 charges carrier concentration at room temperature. What is this type of material, n or p?7. Calculate the conductivity of this material at room temperature, assuming that the mobilities of electrons andof the gaps are the same as for the intrinsic material?e = 0.14 and ?h = 0.048 ?/ V s.? = 2240(Ω − ?)-1. P why?Q1: Calculate the drift current density in silicon sample. If T-300 K, Na-1021/m³, Na-1020/m³V, H-0.85m²/V.S, Mp=0.04m²/V.s, E=35 V/cm.. (Ans: 6.8×10 A/m²).