Pure silicon at room temperature has an electron number density in the conduction band of about 5 * 105 m-3 and an equal density of holes in the valence band. Suppose that one of every 107 silicon atoms is replaced by a phosphorus atom. (a) Which type will the doped semiconductor be, n or p? (b) What charge carrier number density will the phosphorus add? (c) What is the ratio of the charge carrier number density (electrons in the conduction band and holes in the valence band) in the doped silicon to that in pure silicon?
Pure silicon at room temperature has an electron number density in the conduction band of about 5 * 105 m-3 and an equal density of holes in the valence band. Suppose that one of every 107 silicon atoms is replaced by a phosphorus atom. (a) Which type will the doped semiconductor be, n or p? (b) What charge carrier number density will the phosphorus add? (c) What is the ratio of the charge carrier number density (electrons in the conduction band and holes in the valence band) in the doped silicon to that in pure silicon?
College Physics
11th Edition
ISBN:9781305952300
Author:Raymond A. Serway, Chris Vuille
Publisher:Raymond A. Serway, Chris Vuille
Chapter1: Units, Trigonometry. And Vectors
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Pure silicon at room temperature has an electron number density
in the
of holes in the valence band. Suppose that one of every 107 silicon
atoms is replaced by a phosphorus atom. (a) Which type will the
doped semiconductor be, n or p? (b) What charge carrier number
density will the phosphorus add? (c) What is the ratio of the charge
carrier number density (electrons in the conduction band and holes
in the valence band) in the doped silicon to that in pure silicon?
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