Consider a system consisting of a single impurity atom/ion in a semiconductor. Suppose that the impurity atom has one "extra" electron compared to the neighboring atoms, as would a phosphorus atom occupying a lattice site in a silicon crystal. The extra electron is then easily removed leaving behind a positively charged ion. The ionized electron is called a conduction electron, because it is free to move through the material; the impurity atom is called a donor, because it can "donate" a conduction electron. This system is analogous to the hydrogen atom considered in the previous two problems except that the ionization energy is much less mainly due to the screening of the ionic charge by the dielectric behavior of the medium.
Now assume that every conduction electron comes from an ionized donor atom. In this case the number of conduction electrons is equal to the number of donors that are ionized. Use this condition to derive a quadratic equation for Nc in terms of the number of donor atoms (Nd ), eliminating u. Solve for Nc using the quadratic formula. It's helpful to introduce some abbreviations for dimensionless quantities Try x = Nc/Nd, t = kT/I, and so on.)
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