PROBLEM 3 Consider a Si sample under equilibrium conditions, doped with Boron to a concentration 1017 cm-3. At T = 300K, is this material n-type or p-type? What are the majority a) and minority carrier concentrations? Answers: n-type p-type majority carriers minority carriers As the temperature of this sample is increased, ni will eventually b) increase to be higher than the dopant concentration, and the sample will become intrinsic (n =p=ni). Estimate the temperature at which this oCcurs, by finding the temperature at which ni be much greater (at least 10x higher) than the dopant concentration. (You can simply use the plot of ni vs. T in the previous problem - Problem 3.)

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PROBLEM 3
Consider a Si sample under equilibrium conditions, doped with Boron to a
concentration 1017 cm-3.
At T = 300K, is this material n-type or p-type? What are the majority
a)
and minority carrier concentrations?
Answers:
n-type
p-type
majority carriers
minority carriers
As the temperature of this sample is increased, ni will eventually
b)
increase to be higher than the dopant concentration, and the sample will
become intrinsic (n =p=ni). Estimate the temperature at which this ocCcurs,
by finding the temperature at which ni be much greater (at least 10x
higher) than the dopant concentration. (You can simply use the plot of ni
vs. T in the previous problem - Problem 3.)
Transcribed Image Text:PROBLEM 3 Consider a Si sample under equilibrium conditions, doped with Boron to a concentration 1017 cm-3. At T = 300K, is this material n-type or p-type? What are the majority a) and minority carrier concentrations? Answers: n-type p-type majority carriers minority carriers As the temperature of this sample is increased, ni will eventually b) increase to be higher than the dopant concentration, and the sample will become intrinsic (n =p=ni). Estimate the temperature at which this ocCcurs, by finding the temperature at which ni be much greater (at least 10x higher) than the dopant concentration. (You can simply use the plot of ni vs. T in the previous problem - Problem 3.)
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