Q1. A pn junction at its limitsWe set out to design a p'n diode out of Si (c, = 11.7) ,where the donor concentration is 1 x 10 em%3D(a) At what applied reverse voltage will breakdown occur?(b) What is the mechanism that causes this breakdown?(c) For a regular p-n junction, where N, = Na = N, for what value of N will be have the same eriticalelectric field at the same applied Vn?%3!%3D

Diode- When diode is forward biased it is short circuited in a circuit ideally. When diode is…

Answered: on junction at its limits

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Electrical Engineering

on junction at its limits

Electric Motor Control

10th Edition

ISBN:9781133702818

Author:Herman

Publisher:Herman

Chapter59: Motor Startup And Troubleshooting Basics

Section: Chapter Questions

Problem 12SQ: How is a solid-state diode tested? Explain.

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Question

Q1. A pn junction at its limits
We set out to design a p'n diode out of Si (c, = 11.7) ,where the donor concentration is 1 x 10 em
%3D
(a) At what applied reverse voltage will breakdown occur?
(b) What is the mechanism that causes this breakdown?
(c) For a regular p-n junction, where N, = Na = N, for what value of N will be have the same eritical
electric field at the same applied Vn?
%3!
%3D

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