lo-Is м, VGs IREF Ipi M2 M1 VGs -o -Vss (a)

5. For the circuit below, assume the MOSFET operates in saturation and is characterized by parameters VTN and KN. VINO- +VDD Rp OV OUT Rs Vss = -VDD a. Draw the equivalent circuit, replacing the MOSFET with its SCS model. b. Find the output operating point (V。 and I in terms of the input bias VIN) C. What is Vour when VIN=0? d. Draw the small-signal model e. Determine the small-signal gain Vout/Vin. f. Determine the small-signal output resistance g. Determine the small-signal input resistance.

Determine the voltage gain for a NPN Emitter follower stage driven by a finite source impedance (without early effect) (You must derive every expression using the small-signal model method. Draw every circuit, show every equation)

Electrical Engineering Consider the emitter follower circuit below given Vcc=15V. VEE-15V, Rr. -1.8k, VBE 0.7V.VCE,aut = 0.2 V, and 8 = 100 for all the transistors. Find the value of resistor Rink? that will establish a blas current sufficiently large to allow the largest possible output voltage swing. Include the base currents for both Q₂ and Q₂. Please give your answer in two decimal places. Vcc 9 VEE VRE VER

The problem are DC analysis problems. For each of the circuits verify the mode of operation and solve for all applicable DC voltages and currents. > When you "verify" a mode of operation you will need to calculate all three voltages (Vc, Ve, VE for BJTS and VG, Vs, Vp for MOSFETS) and show the correct two conditions are satisfied. > Assume Capacitors acts like open circuits at DC and short circuits for AC. > Assume the following: O Beta = 100 O VBE = 0.7 o V: (Thermal) = 26 mv o V (Threshold) = 2V O VA = -- o For MOSFET saturation mode: assume Ip = K(Ves-V-)? (Assume K = 10 mA/V²). 12V R2 1.0kn R1 100kn 01 R3 >1.0kn -12V

Which of the following is a correct small signal model for a MOSFET? Gate Gate- Gate Gate Source Selected Coordinates Source www Source Source Source Drain Drain Drain Drain

Can you do 1.1 please