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) Draw the Forward and reverse bias PN junction diagram using the following voltages (10V, -9V) and (-5V, OV) respectively (i1) Explain the operation of the above circuits.

Design a voltage-divider bias network using a supply of 24 V, a transistor with a beta of 100, VBE = 0.7 V ,and an operating point of ICQ = 4 mA and VCEQ = 8 V, R1 = 6R2. Choose VE =1/8 VCC.

A base bias method is used in the following circuit. For Bpc - 300, the value of emitter current is: -Vc. +15 V Rc 1.8 k2 RB 560 k2 7.82 mA O 6.84 mA O 7.27 mA

1. The drain current for the E-MOSFET shown in the following figure is 3.0 mA. What type of bias i this? a. Can a JFET use this type of bias? b. Compute the value of VD. c. Compute the value of VG- RG www 10 ΜΩ +VDD +15 V www RD · 2.7 ΚΩ =I

Q1: for a silicon transistor in the figure below = 200 dc {What is the voltage between the collector and emitter VCE, drawing the load line and finding the Q point

The operating point of the npn transistor is defined by a couple of values: Icand Ver- Select one: OTrue O False In the following figure. Q, and Q: are identicaland operate in active mode. if la =9 Icz then V,V2 IC

The rate of fall of current in a diode with reverse recovery charge and reverse recovery current of 59 µC and 37.5 A respectively is_______________________ A/µs .

In the circuit shown in the figure, the internal resistance of a voltage source is given as 3 ohms. Load values ​​are such that R = 20 ohms and X = 20 ohms. The effective value of the VAB voltage at the load ends is 220 V. (Frequency is 50 Hz). What is the active power consumed by the load? (Do not take into account 3 ohms in calculations)