Design a voltage-divider bias network using a supply of 24 V, a transistor with a beta of 100, VBE = 0.7 V ,and an operating point of ICQ = 4 mA and VCEQ = 8 V, R1 = 6R2. Choose VE =1/8 VCC.

The n-channel JFET and the D-MOSFET have very similar I-V output characteristics. Which of these two structures can be operated in enhancement mode and why is that possible.

For the circuit in Figure below, what is Ic3? Assume all transistors are identical. IREF 1 Q5 R1 IREF2 O IE of Q2 O 2 IREF1 O IE of Q1 Vh1 Q6 Q1 03 07 8 Vn2 04 IREF2 R2

Determine vo versus v₁ for the circuit shown in Figure 2. Assume that the MOSFET operates in saturation and is characterized by the parameters K and VT. Vs R₁ www Figure 2 wwww RL R₂ wwwww VO Note: assuming the MOSFET works at normal saturation regime and ips= (VDS -VT)²2 K 2

A. Detemine the value of the collector resistor in an npn transistor amplifier with Ppc = 250, VBB = 2.5 V, Vcc = 9 V, VCE = 4 V, and Rg = 100 k2. B. Detemine Icsat) for the transistor in below Figure. What is the value of IB necessary to produce saturation? What minimum value of VIN is necessary for saturation? Assume %3D VCE(sat) = 0 V. +5 V 10 kN Rg VINO BDc = 150 1.0 MN

3. In a certain n-channel JFET, Ipss= 8 mA and Vp=-4 V. (a) Determine the value of Ves for maximum drain current. (b) Calculate the drain current for VGs=-5 V (c) Calculate the drain current for Ves=-2 V (d) Determine the maximum value of VGs for cut-off condition.