Give an independent set of linear that can ve solved for the current shown. Use the Junction Rule

2) In the circuit given in the figure, R = 6k2, Zener diode breakdown voltage VZ = 3.6V and www mm w wwm w Zener diode power value is given as 6.5mW. wwm the maximum diode current that can flow through the www w m m w mw ww m w ww md w m circuit, Calculate the maximum voltage value that can be applied w w mww m w w m www m w mentn Vz=3.6 v A to the circuit without damaging the diode. wm w w ww m ww

Subject: Electronics Engineering With neat diagram explain the formation of a potential barrier in a p-n junction and show the polarity of the Barrier potential and draw the V- I characteristic of p-n junction diode

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Shown below is a diode circuit. If the input signal Vs = 31 Vp-p and the DC voltage Vdc = 8 V, what is the output voltage (in volts) of the circuit during the negative alteration? No need to show your solution. Just write your numeric answer on the space provided. Round off your answer to 2 decimal places. C1 ... + Vdc 1.0kn Vo Vs Si D1

Please answer the question of the foundations of electrical engineering, the first phase

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Consider three p -n-junctions as shown below. Say true or false. Write a sentence justifying your answer. A B Np=1015 cm3 Np=1017 cm3 Np=1015 cm cm P+ a. Both diodes A and C will have the same reverse saturation current if they are ideal. b. Assuming that the diodes are all ideal, diode B will have the lowest reverse saturation current. c. Assuming that the diodes are non-ideal, diode C will have the highest reverse saturation current.

A semiconductor junction diode, we can say that: a) The diode is composed of two types of crystal, one positive side (Anode) and the other P-type (Cathode) side, allowing the flow of charge from N to P.b) It is an electronic component that has two terminals, the Anode (with material of type N - Electrons) and Cathode (with material of type P - Gaps), which allows the flow of charge from P to N.c) It is the union of a P-type crystal and an N-type crystal, thus creating a PN junction, thus creating a simple solid-state device, the junction semiconductor diode.d) At a temperature of 25 degrees Celsius, the depletion barrier has a potential barrier, which for silicon is 0.7 volts and for germanium it is 0.3 volts.e) None of the above options is correct. Choose one of the alternatives

Trial example of how to use Kirchhoff analysis to determine the initial current in each section along with its direction and the potential difference across the load