Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN: 9780133923605
Author: Robert L. Boylestad
Publisher: PEARSON
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- In the circuit in the figure below the reading of the voltmeter is [V] V. Determine the amount of drain current (in mA). Assume this particular MOSFET has minimum values of loon) = 200 mA at Vas 4 V and Vash)=2 V. vl RG ww 10 MO Vpe 1 Rp 4.7 karrow_forwardFor the circuit sown, using the transistor * values of: B = 200, lc = 4mA and lb = 20uA, find the value of the Base resistor (Rb) required to switch the load "ON" when the input terminal voltage exceeds 2.5v. Vcc Flywheel Diode RB w + Vin ( 90kΩ 30kQ 9kQ 0.07ΚΩ IB R 20 Relay Ic Vce Ov Load Outputarrow_forward2 - Işınımsız birleşim özelliği gösteren yarı iletken malzemeler hangi alanda kullanılır?I. LedII. Lazer diotIII: DoğrultucuIV. Yükseltici In what area are semiconductor materials used that have non-radiative junction properties?I. LedII. Laser diotIII. RectifiersIV. Amplifiers A) II-III B) I-II C) II-IV D) I-III E) III-IVarrow_forward
- Q1: for a silicon transistor in the figure below = 200 dc {What is the voltage between the collector and emitter VCE, drawing the load line and finding the Q pointarrow_forwardFor the NPN transistor below with B-10, find the value of Rg assuming it is in deep saturation mode. HIHI V1 -5V RB VCC 10V RC *1.1kΩ Q1arrow_forwardWhich of the following is true for the gate circuit realized with the following transistors and diodes?arrow_forward
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