For an n-channel JFET having device parameters IDSS= (12 + 0.2 × 80 ) mA and VP= -8V: Sketch the transfer characteristics using shorthand method. Sketch the drain characteristics from the transfer characteristics. (You must draw 4 curves each of which corresponding to one point on the transfer characteristics curve.) Determine the maximum value of gm. Determine the value of gm at VGS= -4V.

Most of the following statements about integrated circuits arecorrect, but one is not. Which statement is NOT true? Select one: a. Transistors are constructed in a small area of an integrated circuit,and are connected to other transistors by wires that are embedded inthe integrated circuit b. Wires that carry signals may be embedded in a substrate without a shortcircuit because a short circuit would require a signal to cross areverse biased junction c. Each transistor on an integrated circuit is manufactured individually,one at a time d. An integrated circuit contains several layers

1. For an n-channel JFET having device parameters IDSS= 17 mA and VP=-5V: a)Sketch the transfer characteristics using the shorthand method. b)Sketch the drain characteristics from the transfer characteristics. (You must draw 4 curves, each of which corresponding to one point on the transfer characteristics curve.) c)Determine the maximum value of gm. d)Determine the value of gm at VGS= -2V and -3V.

A base bias method is used in the following circuit. For Bpc - 300, the value of emitter current is: -Vc. +15 V Rc 1.8 k2 RB 560 k2 7.82 mA O 6.84 mA O 7.27 mA

3. In a certain n-channel JFET, Ipss= 8 mA and Vp=-4 V. (a) Determine the value of Ves for maximum drain current. (b) Calculate the drain current for VGs=-5 V (c) Calculate the drain current for Ves=-2 V (d) Determine the maximum value of VGs for cut-off condition.

Derive the output resistance using small signal model for the following circuits, assuming the transistor has output resistance of a transistor is ro and transconductance of gm. Rout PPA Rout Vb- Vbo Rout Rout Vdd Vb- Rout