For a Si sample at 300 K doped with Nd=1016/ cm³ of Phosphorus. Calculate the resistivity and draw the band diagram showing E. EF, E₁, Ev. What is energy difference of Ep-E in eV?
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- How many valence electrons are generally contained in materials used for insulators?Departments ETC CIMS Determine the current Ir1, Ir2, Ir3 in mA and the voltage across R1 for the network shown in the figure if E=20 V. Assume diode to be Germanium.( R1=5.2kOhm, R2 2.2kOhm, R3=1.8kOhm) RI R2 R3 IR1 IR2 IR3 VR1(1-7) Find the concentration of holes and electrons in a p-type Germanium at 300 k, if the conductivity is 100 per ohm per cm. Also find these values of N- type Silicon, if the conductivity of 0.1 per ohm per cm .given for Germanium n-2.5×1013/cm³ Hn=3800 cm2/v-s, up=1800 cm?/v-s, and for Silicon n=1.5x101%cm', Hn=1300 cm²/v-s, µp=500 cm²/v-s
- What is the voltage across it in volt if a diode with an ideality factor of 1 has a reverse saturation current of 1x10-15 A. If 1 mA of current is flowing through it while operating at 300°K. Final answer with two decimal place.A diode conducts 1mA at 20°C. If it is operated at 100°C, what will be the current? Given data: n=1.74 and NTC value = 2.2mV/°C.Question:1 A diode whose internal resistance (forward biased) is 20 2 is to supply power to a 1000 2 load from a 110 V,m.s source of supply. Calculate: i. The peak load current ii. The D.C. load current iii. The A.C. load current iv. The D.C. diode voltage The total input power to the circuit V. R-20Ω 110 V R 10002 r.m.s.
- If the forward voltage drop on a diode is 772 mV, what is the current passing through it? Assume IS=3,2x10-16 A. a. 3,142 mA b. 1,885 mA c. 3,771 mA d. 4,399 mA e. 2,514 mAQ-3. Draw 1-V characteristics of 5 V silicon zener diode (Vz-5V) and show its parameters V Vz, Izx. Izs, Izm on the curve. Q-4. Determine the range of Road (Rmin, Rmax) that will maintain Vz at 5 volts for the circuit given below. Rs m 1.0kg V1 40 V Pzm=150mwWhich of the following ratings (PIV- Peak Inverse Voltage and temperature) is true? Si diodes have lower PIV and narrower temperature ranges than Ge diodes. Si diodes have lower PIV and wider temperature ranges than Ge diodes. Si diodes have higher PIV and wider temperature ranges than Ge diodes. Si diodes have higher PIV and narrower temperature ranges than Ge diodes.
- SuperNe lI. e Ims.act.edu.om P Flag question A semiconductor diode allows current flow when O both the n-type and p-type materials have the same potential O there is no potential on the n-type or p-type materials O the p-type material is more positive than the n-type material the n-type material is more positive than the p-type material Next pageA Si diode has a leakage current Is = 64 nA at room temperature (25°). The leakage current if the temperature increases to 62 °C is nA. No need for a solution. Just write your numeric answer in the space provided. Round off your answer to 2 decimal places.5. A voltage source produces a "Triangle" wave and is connected to a series diode and resistor circuit as shown. D1 KH D V1 #1 V R1 R Using the nominal piecewise linear model for a diode, determine from the following possibilities the graph that best represents the voltage across the resistor? (Delete those that do not apply) (Blue curve VR, dashed curve V1). Then determine which graph best represents the voltage across the diode.