EXAMPLE 7.6 For the n-channel depletion-type MOSFET of Fig. 7.30, determine: a. Ipo and VGS b. VDs. V₁0- H C₁ R₁ R₂ www 110 ΜΩ G • 10 ΜΩ Rp 9 18 V Rs JE 1,8 ΚΩ D ENGG CC PPT Notes 01Sep2020 V01 C₂ 750 92 H DSS = 6 mA Vp = -3 V -。V FIG. 7.30 Figure 2.8 Example of a D-MOSFET Voltage Divider Circuit. EEETE 3102N Electronics II

Calculate the theoretical saturation current, Is of an ideal silicon p-n junction having following specifications: ND 1018 cm3, NA= 5x1016 cm3, TT 4 us, D= 13 cm2/s, D 25 cm2/s and a device area of .7x10-3cm2. Also, calculate the forward and reverse current at +0.6 V

Pls help ASAP. Pls show all work and do all parts of the question.

Question #2 If a PN junction has a saturation current of 7.3 fA, find the current when the junction is forward biased at room temperature (300K) when VA is: (1) 0.5 V (2) 0.6 V (3) 0.7 V (4) 0.8 V Part (a) options in uA Part (b) options in uA Part (c) options in mA (a) 2 Part (d) options in mA (a) 23 (a) 2 (b) 4 (a) 76 (b) 2 (b) 4 (c) 16 (b) 234 (c) 16 (d) 8 (c) 84 (d) 8 (c) 345 (е) 24 (d) 125 (e) 24 (d) 190 (f) 12 (e) 187 (f) 12 (e) 35