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Sketch the energy band diagram for a Silicon n+p junction under reverse bias conditions and show all the carrier motion (Jn|diff, Jn|drift, Jp|diff, Jp|drift). Assume that the n-side is doped with 10^18/cm3 donor atoms and that the p-side is doped with 10^14/cm3 acceptor atoms. Assume Si at 300K
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