A number of metal-semiconductor (MS) contacts are formed on Ge, Si, and GaAs substrates maintained at room temperature. For one or more of the MS parameter combinations listed below, (a) draw the equilibrium energy band diagram characterizing the MS contact. (b) present a reason to confirm the ohmic or rectifying nature of the contact.

A number of metal-semiconductor (MS) contacts are formed on Ge, Si, and GaAs substrates maintained at room temperature. For one or more of the MS parameter combinations listed below, (a) draw the equilibrium energy band diagram characterizing the MS contact. (b) present a reason to confirm the ohmic or rectifying nature of the contact.

Modern Physics

3rd Edition

ISBN:9781111794378

Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Publisher:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Chapter12: The Solid State

Section: Chapter Questions

Problem 12P

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