Direction: Analyze the given circuit and find the following: Logic Expression Simplified Logic Expression using Boolean Algebra Simplified Circuit
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Direction: Analyze the given circuit and find the following:
- Logic Expression
- Simplified Logic Expression using Boolean Algebra
- Simplified Circuit
Step by step
Solved in 2 steps with 1 images
- The circle is below(for D1-1N4148 is 1N4148 Diode). and also there have a table(. Note that the first 3 rows of measurement are obtained when the diode is reverse-biased) Vout_dc (V) VD (V) ID (μA) 0.51 -0.51 0.0 0.23 -0.20 0.0 0.10 -0.08 0.0 0.00 0.00 0.0 0.05 0.04 0.0 0.11 0.09 0.0 0.17 0.15 0.1 0.19 0.20 0.1 0.27 0.25 0.4 0.32 0.30 1.6 0.36 0.34 3.1 0.42 0.40 8.2 0.46 0.42 14.3 0.52 0.47 28.0 Questions: 1) plot the diode’s I-V characteristics on a linear scale (ID on the y-axis and VD on the x-axis) 2) [RP4] 3) [RP5]For self bias configuration. Solve for Ib and Ic. ... 4 RC 15002 RB VCC 5 16V 100A/A 80 kQ Re 10002 Ib=Blank 1 HA Ic=Blank 2mASIGNAL Mention the function or work of each component in the circuit? + Vcc Rc Rc Cc HH www R₁ Cin HH R₂ www. RE Cc HH CE www R₁ 30 www wwww RE CE OUTPUT
- In a rectifier circuit , DC output voltage and RMS output voltage is 0.3 V & 0.55 V respectively. The form factor of this circuit is a. 3.67 b. 0.55 c. 1.35 d. 1.83Determine Ic Determine VE Determine VB Determine R1FAIRCHILD Discrete POWER & Signal Technologies SEMICONDUCTOR ru 1N4001 - 1N4007 Features • Low torward voltage drop. 10 a14 * High aurge eurrent cepablity. 0.160 4.06) DO 41 COLOR BAND DGNOTEs CAT-Cos 1.0 Ampere General Purpose Rectifiers Absolute Maximum Ratings T-26*Cuness atnerwioe rated Symbol Parameter Value Units Average Recttied Current 1.0 375" lead length a TA - 75°C Tsargei Peak Forward Surge Current 8.3 ms single halr-sine-wave Superimposed on rated load JEDEC method) 30 A Pa Total Device Dissipetion 2.5 20 Derste above 25°C Ra Tag Thermal Resistence, Junction to Amblent 5D Storage Temperature Range 55 to +175 -55 to +150 Operating Junetion Temperature PC "These rarings are imithg valuee above whien the serviceatity or any semiconductor device may te impaired. Electrical Characteristics T-20'Cunieas ofherwise roted Parameter Device Units 4001 4002 4003 4004 4005 4006 4007 Peak Repetitive Reverse Vellage Maximum RME votage DC Reverse Voltage Maximum Reverse Current @ rated VR…
- A. Find the value of Ibq B. Find the value of Rf C. Find the value of (Re) tIn the circuit shown in the figure, Rs = 1.88Kohm, R1 = 1201.67Kohm, R2 = 5.72Kohm, R3 = 59.80Kohm, R4 = 15.44Kohm, R5 = 3.15Kohm, R6 = 1.05Kohm, Ry 94.19Kohm, VCC1 = 11.00V, %3D VCC2 = 10.00V, Beta1= 126.00, Beta2= 248.00, VT = 25mV, IVBE| = 0.7V and OPAMP is ideal, calculate the absolute value of the voltage gain (IVO/VS|) of the circuit relative to the source (The %3D result will be positive).write ALP to calkyate the ho. of ones and Zeros in an 8 but number 9808 h948th
- ier quesuon Will save this response. Quèstion 6 Power supply circuit is delivering 0.5 A and an average voltage 20 V to the load as shown in the circuit below. The ripple voltage of the half wave rectifier is 0.5 V and the diode is represented using constant voltage model. The smoothing capacitor value is equal to iL-DC =05A RL VLDC =20V 220V omsb 0.01 F 0.02 F 0.0167 F Hows b None of the above DEV ChpQuèstion 3 NPN BJT is considered as two diodes their anodes are connected together. O True False A Moving to another question will save this response. ChpGive the meaning of each acronym of solid state devices. Also sketch the schematic symbol for each device. SUS Shockley diode D-MOSFET JFET SCR DIAC THYRISTOR Device TRIAC 1. 3. 4. 6. 8. 10. 12. 14. Symbol 2. 5. 7. 9. 11. 13. 15. Meaning No entry