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- 1 (b) When Ef touches intrinsic Fermi energy Eri, comment on whether an extrinsic semiconductor will stay extrinsic or not. What will be ultimate state of semiconductor in this case?10. The figure below shows a circuit for charging a 12-V battery. If V, is a sinusoid with 24-V peak amplitude, the fraction of each cycle during which the diode conducts is 100 n F12 V a) One quarter of a cycle b) One-third of a cycle c) One half of the cycle d) Three quarters of a cycleWhich of the following ratings (PIV- Peak Inverse Voltage and temperature) is true? Si diodes have lower PIV and narrower temperature ranges than Ge diodes. Si diodes have lower PIV and wider temperature ranges than Ge diodes. Si diodes have higher PIV and wider temperature ranges than Ge diodes. Si diodes have higher PIV and narrower temperature ranges than Ge diodes.
- Which of the following ratings (PIV- Peak Inverse Voltage and temperature) is true? Si diodes have lower PIV and wider temperature ranges than Ge diodes. Ge diodes have lower PIV and smaller temperature ranges than Si diodes. Si diodes have higher PIV and narrower temperature ranges than Ge diodes. Si diodes have lower PIV and narrower temperature ranges than Ge diodes.In a rectifier circuit , DC output voltage and RMS output voltage is 0.3 V & 0.55 V respectively. The form factor of this circuit is a. 3.67 b. 0.55 c. 1.35 d. 1.833 D: D₁ Da Voce RL In the circuit above, the input voltage is 120 Vrms at 60 Hz and the load is a 1 Ohm resistor. a. During the first half of the cycle, when the voltage is positive, which diodes are conducting current? b. During the second of the cycle, when the voltage is negative, which diodes are conducting current? c. What power is dissipated in the 1 Ohm resistor?
- For the circuit shown below, the diode cut in voltage is Vy0.7V. Th value of I, varies over the range 0 s l, s 6mA. The Value of R-2.4kn and the value of Ve 4.8V Vo At which value of l, does the diode turn on O a.2.292 mA b. 1.833 mA c. 2.865 mA O d. 1.467 mA If l = 2.1mA, What is the value of Vo O a. 5.04 V O b. 4.03 V O c 6.3 V O d. 3.23 V If l= 1.6mA, What is the value of lo O a. 1.917 mA b. 0 mA O c 0.639 mA O d. 1.278 mA EO oA Fullwave rectifier supplies a load of 1k. The a.c voltage applied to the diode is 220 volt rms. If diode resistance is neglected, calculate (i) Average d.c voltage (ii) Average d.c currentWhich of the following ratings (PIV- Peak Inverse Voltage and temperature) is true? O Si diodes have lower PIV and narrower temperature ranges than Ge diodes. Si diodes have higher PIV and narrower temperature ranges than Ge diodes. Si diodes have lower PIV and wider temperature ranges than Ge diodes. Ge diodes have lower PIV and smaller temperature ranges than Si diodes.
- 7/ What is the semiconductor constant for Silicon? a. 0.7 b. 0.3 c. 2 d. 1Which of the following ratings (PIV- Peak Inverse Voltage and temperature) is true? O Si diodes have higher PIV and wider temperature ranges than Ge diodes. Si diodes have lower PIV and wider temperature ranges than Ge diodes. Si diodes have higher PIV and narrower temperature ranges than Ge diodes. Si diodes have lower PIV and narrower temperature ranges than Ge diodes.The input to a half-wave rectifier is 60 Hz AC voltage. If the voltage drop across diodes is 0 V, The RMS voltage at the load would be: O A. Higher than the RMS voltage at the input B. None of the other choices are correct O C. Cannot tell until we know the peak voltage at the input O D. Lower than the RMS voltage at the input O E. The same as the RMS voltage at the input