Consider the silicon PN junction in Fig. 4-47. P+ Р N N+ 0.4 μm 1.2 μη FIGURE 4-47 (a) If N₁ = 5 × 10¹6 cm³ in the P region and N₁ = 1 × 10¹7 cm³ in the N region, under increasing reverse bias, which region (N or P) will become completely depleted first? What is the reverse bias at this condition? (Hint: use Nap = Non. The doping densities of P+ and N+ are immaterial). (b) Repeat part (a) with N₁ = 1 × 1016 cm³ and Nd = 1 × 10¹7 cm³. (c) What are the small-signal capacitances (F/cm²) at the bias conditions in (a) and (b)?

Consider a step pn junction made of silicon. The p- and n-sides are doped such that Ec – EF = 0.21 eV on the n-side and EF – Ey = 0.18 eV on the p-side. The pn junction is under zero bias and kept at T = 300 K. Find the doping density in the n-side in unit of cm-3. Answers within 5% error will be considered correct. Enter answer here

After solving a circuit with ideal diodes (Vf=0), what check is necessary for diodes initially assumed to be on? Off? We must check to see that reverse voltage appears across all diodes assumed to be on, and we must check to see that forward current flows in diodes assumed to be off We must check to see that forward current flows in diodes assumed to be on, and we must check to see that reverse voltage appears across all diodes assumed to be off

What is the zero-bias junction capacitance/cm2 for a diode with NA = 1018/cm3 on the p-type side and ND = 1020/cm3 on the n-type side? What is the diode capacitance with a 3-V reverse bias if the diode area is 0.05 cm2?

just got rejected, this is the whole question

What is the zero-bias junction capacitance per cm2 for a diode with NA =1018/cm3 on the p-type side and ND = 1015/cm3 on the n-type side. What is the diode capacitance with a 9 V reverse bias if the diode area is 0.02 cm2?

10+ D NAME: The diodes in the circuit below have a saturation current Is = 10-¹4A. The NMOSFET has a threshold voltage of +1V and a K parameter of 10mA/V². > ID = Is (evo/VT - 1) a) Use the exponential diode model b) Oops. Someone built the circuit below, and apparently made a mistake selecting the components. They measure the voltage VA and it is equal to 1.9V. Based on VA = 1.9V, determine the expected value of V₂. +1 -3 V AVD -0.4 3-V 3-2V0 I VA=1.9V 041 VA to calculate VA. 2.2 ΚΩ +10V T 100 Ω NMOSFET VB Ins=4.05m

Help please  not sure about answer

Please solve the problem

Activity 1: The following circuit uses two diodes D1, and D2 with threshold voltage of 0.7 V for each and one Zener diode D3 with same threshold voltage and reverse breakdown voltage of 5.1 V. 10Vp 500Hz R1 1kQ D1 V2 -2V D2 D3 RL 3kQ Vo (1-A) Explain the operation of the Zener diode in forward and in reverse bias. (1-B) Analyze the circuit thoroughly assuming many source values that lead to all possible cases of diodes states. For each case (Hint: 4 cases), re-plot the circuit and develop the relation between the output voltage and the source voltage. (1-C) Draw input and output waveforms accurately over 4-ms period. Identify the diodes states on the graph based on the categorization of cases from part (1-B).