concentration, n rent le

Materials Science And Engineering Properties
1st Edition
ISBN:9781111988609
Author:Charles Gilmore
Publisher:Charles Gilmore
Chapter2: Atoms, Chemical Bonding, Material Structure, And Physical Properties
Section: Chapter Questions
Problem 2.26P
icon
Related questions
Question
It's urgent please solve asap
A Ge pn junction is doped with acceptor doping of 105 cm and donor doping of 10 cm
Assuming that: Area = 0.01 cm?, Lp = L, =10 um, D, = 50 cm/s, and D,= 100 cm/s, Find at room
temperature (300 K):
a) Intrinsic carrier concentration, n
b) Built in potential.
c) The saturation current Is.
1.
) Results of measurements of the diode current and the corresponding diode voltage showed
that I=10 A at V-800 mV. Estimate Is, and the diode voltage at 10 I and /10 for this junction diode.
2.
Transcribed Image Text:A Ge pn junction is doped with acceptor doping of 105 cm and donor doping of 10 cm Assuming that: Area = 0.01 cm?, Lp = L, =10 um, D, = 50 cm/s, and D,= 100 cm/s, Find at room temperature (300 K): a) Intrinsic carrier concentration, n b) Built in potential. c) The saturation current Is. 1. ) Results of measurements of the diode current and the corresponding diode voltage showed that I=10 A at V-800 mV. Estimate Is, and the diode voltage at 10 I and /10 for this junction diode. 2.
Expert Solution
steps

Step by step

Solved in 2 steps with 2 images

Blurred answer
Knowledge Booster
Methods to determine productivity
Learn more about
Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, civil-engineering and related others by exploring similar questions and additional content below.
Similar questions
  • SEE MORE QUESTIONS
Recommended textbooks for you
Materials Science And Engineering Properties
Materials Science And Engineering Properties
Civil Engineering
ISBN:
9781111988609
Author:
Charles Gilmore
Publisher:
Cengage Learning