Charge stored in depletion layer (coulomb) NNe AW N+N Forward current (A) 1 1,+1, D, 1,- Ag n LN D, D. Saturation current (A) LN. VRelationship

B/ The conductivity for n-side is 1500 s/m and for p-side is 400 s/m in pn junction, while the conductivity of the pure silicon is 4 x 10-4 s/m. Find the barrier potential at 300°K, if the Hn = 2.4µp?

A pn diode is a semiconductor device in which, unlike in a metal, the current flow is due not only to negative electron charge flow but also due to positive charges. The positive charges are usually referred to as holes, as they are really "deficit" in the negative charge distribution. The semiconduction material (usually silicon with Er = 11 or gallium arsenide with e, impurities are added. Initially, the physically important region on the p side contains a density p+ of positive charges per unit volume, whereas the n region contains a negative charge density p-. When they are brought in contact, a static equilibrium follows in which a surplus of negative charges will accumulate in the (thin) p region, and a surplus of positive charges will accumulate in the (much thicker) n region. These two layers produce an electric field similar to that of a capacitor with infinite parallel plates. In equilibrium, the total number of positive charges in the n region is equal to the number of…

21. An ideal Schottky junction is formed by p-Si with Na = 10 cm 1/C ? 3 and an unknown metal. The results of the C-V measurements of this structure together with a straight-line fit are shown in the figure. Determine the work function of the metal. Answer: 4.73 eV - 0.2 V Show the workings to get to the provided answer please

It is required to grade a string having seven suspension insulators. If the pin to earth capacitance are all equal to C, determine the line to pin capacitance that would give the same voltage across each insulator (C1, C2, …….C6)  of the string.

Consider a silicon P- N step junction diode with Nd = 1018 cm-3 and Na = 5 × 1015 cm-3 . Assume T=300K. Calculate the capacitance when it is under reverse biased at 1.5V. Assume a cross sectional area of 1um2. If you want to make the capacitance decrease by factor of 3 what should be the width of the depletion layer?

For an ideal silicon p-n abrupt junction with NA = 1017 cm-3 and ND = 1015 cm-3(a)calculate Vbi at 250, 300, 350, 400, 450 and 500 K and plot Vbi versus T. (b) comment on your result in terms of energy band diagram. (c) find the depletion layer width and the maximum field at zero bias for T = 300 K

For a non-uniformly doped semiconductor sample, the sheet- 1 resistance is given by: R =- aju(x)n(x)dx For the three n-type thin layers on a p-type substrate shown in the Figure, determine Rh- (n=1250 cm²/V/s, q=1.6 × 10-¹⁹ C) n (cm-³) 1016 10¹5 0 n (b) (a) (c) 104 P x (cm)

The electric field profile in the depletion region of a p-n junction in equilibrium is shown in the figure. Which one of the following statement is not true? E (V/cm) X (4em) -0.1 Both n-type and p-type depletion regions are uniformly doped. The potential difference across the depletion region is 700 mV. Left side of the junction in n-type and right side is p-type.

The applied electric field in p-type silicon is E=10V/cm. The semiconductor conductivity is 1.5(Ω-cm)-1and cross-sectional area is 10-5cm2. Determine the driftcurrent. (b) A drift current density of 120A/cm2is established in n-type silicon with an applied electric field of 18V/cm. If the electron and hole mobilities are µn =1250 cm2/V-s and µp =450 cm2/V-s, respectively, determine the required doping concentration.