Calculate: a) VGSQ and IDQ b) VDS , VD , VG and VS
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Q: Using the drain characteristic of Fig. a. What is the value of ra for VGS = -1 v? b. What is the…
A: The drain characteristics are plotted between VDS and ID of the FET or MOSFET.
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Q: Calculate: a) IDQ and VGSQ b) VDS
A: IDQ and VGSQ ? VDS?
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Q: Q2: Given VGS(Th) = (4 V) %D and ID(on) = (4 mA) at VGS(on) = (6 V): 1. Determine k and write the…
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Q: For the amplifier circuit of fig., determine VGsQ, IpQ, Z4, Zo „A¡ and Ay.
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Q: for the Circuit shown in fig if Vc= 1oV B. 2009 Voc IB- 20 MA %3D Ri 2.6KAS 1.V Ikal
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Calculate:
a) VGSQ and IDQ
b) VDS , VD , VG and VS
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- A. Determine V1 without C B. Determine V1 and VR with C C. From aB Determine V2, IL, PD D. From B determine the efficiency of the regulator (OUR SUBJECT IS INDUSTRIAL ELECTRONIC)b) Use the ALU 74181 in the figure below and the tables (one is enough; second maybe, need to check the new kit) to implement : A + B, A – B, A. B. (MSB) (LSB) 10 (MSB) F3 F2 F1 FO S3 Cn+4 16 s2 20 U14 15 S1 14 so A3 A2 A1 AO B3 B2 B1 B0 M Cn 24 23 22 21 28 27 T26 25 (LSB) (MSB) (LSB)(MSB) (LSB) And given that under M = 1 the circuit performs the following arithmetic and logic functions according to Table 11.1. Input selection S3 Output M-H S2 SI Cn=L. F3 F2 F1 FO A 1 -A В -B A&B AxB 1 A'B 1 Ax(-B) (-A)xB (-A)x(-B) 1 1 ACTIVE HIGH DATA M-L: ARITHMETIC OPERATIONS SELECTION M-H LOGIC s3 s2 s1 so Ino carry) (with carry) F-A PLUS 1 F- LA + B) PLUS 1 F- (A + BI PLUS 1 FUNCTIONS L L F-A F-A+B F-AB F-A H FA+B F-A+T F- MINUS 1 12s COMPL) F-A PLUS AB F- IA + BI PLUS AB L L L L F-0 F-ZERO F- AB F-A PLUS AB PLUS 1 F- (A + BI PLUS AB PLUS 1 L L L H L F-AOB F- AB L L F-A MINUS B MINUS 1 F-A MINUS B F- AB MINUS 1 F- A F-A PLUS AB PLUS1 F-A PLUS B PLUS 1 F- IA + B PLUS AB PLUS 1 L H L F-A PLUS AB…Q 2) A single phase half-wave uncontrolled rectifier with RL load is shown With R=1002, La 0. 1H w-377rad/s and V 100V, Determine: a) An expression for the load current i(t). b) The value of the current at t3D16 ms. c) The average load current (1C WLialx197=ア7.9 =121 V, = V, sinfar) 17.2 0.360
- For the below shown rectifier configuration, find the expression for the average value of voltage across the load resistor R, if the supply voltage Vs = Vm sinwt and firing angle = a. RLOAD Vm/T Cosa Vm/TT (1+cosa) O 2Vm/TT Cosa O 2Vm/TT (1+cosa) O O O O1) Diode half-wave rectifier a) Consider the half-wave rectified sinewave voltage waveform at the right. What is the DC voltage and RMS voltage in terms of Vpeak? Remember: Vp peak ann T/2 1 Vay = DC = v(0)de avg T Sv(t)dt and V = Hve v² (t)dt TV1 R1 Da S Hill Db KH R2 + V3 I Given that R1=2k, R2=1k, and Da and Db are Si Diodes: a. When will Da conduct with respect to V1? b. When will Db conduct with respect to V1? c. When will both Da and Db not conduct?
- Design a voltage regulator that will maintain an output voltage of 20 V across a 1-k-ohm load with an input that will vary between 25 V and 40 V. Then, Calculate; a. value of resistor R in ohm b. value of IRmax in ohm c. value of IL in mA d. value of IZM in mAQ2) Find the Performance Parameters of a Full-Wave Rectifier with an RL Load, the single-phase full-wave rectifier of the figure below has L = 6.5 mH, R = 2.52 and E= 10 V. The input voltage is Vs = 120 V at 60 Hz. Assume that the load current is continuous current. Where: V io (t) = -(sin(wt - 0)+ im Z 2 -R 1-ewr -sin 8.e *) E R Determine: (1) The steady-state load current lo at wt = 0, (2) The average diode current Ip(av), (3) The rms diode current Ip(ms), (4) The rms output current lo(ms), and (5) The input power factor PF D₁ D₂ A Pa D₂ A + Vo 1. EQ1) What is the value of Vout for each branch of the circuit? V= 10 v , V barrier = 0.7) V 1 KO G 20 U. A В с VA=... VB=.. VC=.. Q2)*Write down the value of Vz of A, B, C *Write down the value of threshold voltage... A - B - LV -Diode LV -Diode _V Z-Diode C- -6 -4 0,7 U in V C (Ctrl) 本中 I in mA
- In the circuit shown below. Let Vm-35 V and i-20 mA and VpQ -0.7 V: iD 3 kQ 0.8 kO Vmcos(@t)V For t Os, the current in the diode equals: Oa. 0 mA Ob. 4 mA Oc. 2 mA Od. 6 mA If t = T/4, then the current in the diode equals: Oa. 6.29 mA Ob. 5.03 mA Oc. 4,03 mA Od. 7.86 mA If t = T/2, then the current in the diode equals: Oa. 15.24 mA Ob. 13.24 mA Oc. 19.24 mA Od. 17.24 mAConsider a n-type silicon sample. If a power supply is connected between two ends of the silicon sample with 5 volts of voltage, 5 milliampers of current flows through the sample. If Na=3x1014 cm-3, N3=0, Dn=10 cm2/sec, Dp=20 cm2/sec, kt/q=D0.025 volts, obtain mobilkity if the sample area is two times its length in magnitude. (q=1.6x10-19 C, T=300 °K, kT=0.025 Ev, n=1010 cm-3) O a. 0.75 O b. 12.2 O c. 10.42 O d. 0.0675 O e. 20.85 O f. 0.45 O g. 8.5 O h. 885For the ideal-diode clipper circuit given below, VS = 12.sinwt V. a. Determine the output voltage Vout and sketch this function. b. Remove the short circuit between points x and y, and replace it with a 2k2 Resistor. Find the range of values of VS for; D1 and D2 are OFF D1 is ON and D2 is OFF D1 is OFF and D2 is ON Is it possible for both D1 and D2 to be ON? y 1kO 3V D2 VS 3kQ. Vout D1 6V