An NMOS device has threshold voltage V₁ = 1.25 volts and gate voltage VGS = 4.5 volts. What is the maximum value of Vps for which the device will be operating in triode mode?

4. A MOS-C, p-type semiconductor is Si at 300K, Xo = 0.5 µm and doped with 6 x %3D 15 10/cm and operates under depletion bias. Assume that K, = 11.8 for Si and Ko = 3.9 for Sio?. Calculate the following parameters: (a) Calculate the depletion width (W) (b) Voltage gate (VG). %3D

An RTD is to be used as a temperature sensor and has a resistance at 0°C of 198 ohms. It forms one arm of a wheatstone bridge being balanced at this temperature and each of the other arms also being 198 ohms. If the temperature coefficient of the RTD material is 0.0075/K, what will be the output voltage in millivolts from the bridge per degree change in temperature if the supply voltage is 11.01V? No label, no unit, number only. Differential amplifier ... Offset ουtput Power supply Compensation lines RTD Add your answer

A silicon controlled rectifier (SCR) has a forward breakdown voltage of 230 V. When a gate current of 2 mA flows in the gate circuit. If a sinusoidal voltage of 400 V peak is applied, find the following: Firing angle. Average output voltage. Average current for a load resistance of 180 Ohms. Power output