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Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN: 9780133923605
Author: Robert L. Boylestad
Publisher: PEARSON
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![A silicon p-n junction is formed between n-type Si doped with Np = 1017 cm-3
and p-type Si doped with NA = 1016 cm-3. Assume n; = 1.5 x 1010 cm-3.
a) Find n, np. Pp, and Pn.
Code :2021011
b) Calculate the built-in potential Vo .](https://content.bartleby.com/qna-images/question/a59fd38c-2b8b-4aab-8c3b-abb0d3b4ec2d/275dca26-de02-4e6f-bc90-0e93b7845fec/vsqmh6sl_thumbnail.jpeg)
Transcribed Image Text:A silicon p-n junction is formed between n-type Si doped with Np = 1017 cm-3
and p-type Si doped with NA = 1016 cm-3. Assume n; = 1.5 x 1010 cm-3.
a) Find n, np. Pp, and Pn.
Code :2021011
b) Calculate the built-in potential Vo .
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