A silicon p+ - n junction has a donor doping of 7*10^17 cm-3 on the n −side and a cross-sectional area of 10^-3 cm^2. If  Tp = 2 us and Dp = 10 cm2/s, calculate the current with a forward bias of 0.75V at 300K.

After solving a circuit with ideal diodes (Vf=0), what check is necessary for diodes initially assumed to be on? Off? We must check to see that reverse voltage appears across all diodes assumed to be on, and we must check to see that forward current flows in diodes assumed to be off We must check to see that forward current flows in diodes assumed to be on, and we must check to see that reverse voltage appears across all diodes assumed to be off

3. In the following circuits, given source voltage Vs=9V, R1, R2 and R3 all are 1kOhms. Answer the questions by considering the diodes as ideal and practical silicon ones respectively. Vs Vs Vs R2 R2 R2 Vout P D R1 R1 R3 R1 (a) Vout = ? (b) Vp = ? (c) Vp = ? Note: Vp means the voltage at point p. w

Find values of the intrinsic carrier concentration ni for silicon at -55°C. 1.5 x 1010 carriers/cm3 O 5 x 1010 carriers/cm3 2.7 x 106 carriers/cm2 2.7 x 106 carriers/cm3