Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN: 9780133923605
Author: Robert L. Boylestad
Publisher: PEARSON
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Consider an p-type silicon for which the dopant concentration ND = 1015/cm3. Find the electron and hole concentrations at T= 350 K.
electron =
1016/cm3
& holes= 2.25 × 104/cm³
electron = 17.225 x 10/cm3 & holes=1015/cm3
electron = 2.25 × 104/cm³ & holes= 1016/cm³
electron = 1015/cm³ & holes= 1022/cm3
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Transcribed Image Text:Consider an p-type silicon for which the dopant concentration ND = 1015/cm3. Find the electron and hole concentrations at T= 350 K. electron = 1016/cm3 & holes= 2.25 × 104/cm³ electron = 17.225 x 10/cm3 & holes=1015/cm3 electron = 2.25 × 104/cm³ & holes= 1016/cm³ electron = 1015/cm³ & holes= 1022/cm3
Find the resistivity of p-type silicon with NA = 10^15/cm3 at T=300K. Assume that for intrinsic silicon un = 1350
cm2/N.s and pp = 480 cm2/N.s, and for the doped silicon un = 1100 cm2/N.s and up = 350 cm2/N.s.
17.86 Q.cm
17.86 Q
13.02 Ωcm
5.68 Ω.cm
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Transcribed Image Text:Find the resistivity of p-type silicon with NA = 10^15/cm3 at T=300K. Assume that for intrinsic silicon un = 1350 cm2/N.s and pp = 480 cm2/N.s, and for the doped silicon un = 1100 cm2/N.s and up = 350 cm2/N.s. 17.86 Q.cm 17.86 Q 13.02 Ωcm 5.68 Ω.cm
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