Answered: A sample of Ge at 300K has a uniform…

A sample of Ge at 300K has a uniform donor concentration of 2 x 1013cm3. The excess carrier lifetime is found to be tp0 24 us. The electron lifetime (us), n-2.4 x 101 cm-3?

University Physics Volume 3

17th Edition

ISBN:9781938168185

Author:William Moebs, Jeff Sanny

Publisher:William Moebs, Jeff Sanny

Chapter6: Photons And Matter Waves

Section: Chapter Questions

Problem 128AP: The HC1 molecule oscillates at a frequency of 87.0 THz. What is the difference (in eV) between its...

See similar textbooks

Related questions

Q: Determine the power absorbed by each of the elements below. 1 A + 8e mA ill -16e V 10-3 i1 2 V + 2 V…

Q: Q.2] A silicon p-i-n photodiode with an area of 1.5 mm? is to be used in conjunction with a load…

Q: Consider a gallium arsenide sample at T= 300 K with doping concentrations of Na =0 and Na 1016 cm.…

A: The Semi conductor formed is n-type current density is given by Jn =…

Q: A Hall probe made from a semiconductor in the form of a cube of side 1 mm is being designed to…

Q: Calculate the holes concentration (in Tera electrons/m³) for the intrinsic silicon at (350°k). (Nc=2…

A: Given data: The temperature is T=350 K. The constants are, NC=2×1023/m3Nv=NC/2=1×1023/m3

Q: (5.19) A laser diode emits at 830 nm when operating at an injection current of 100 mA. (a) Calculate…

A: Given data: λ = 830nm = 830×10-9m I = 100mA =10-1A

Q: The exchange current densities for a hydrogen-evolution reaction on three different metals are 5x10…

A: current densities for a hydrogen-evolution reaction on three different metals are 5x10* A/cm², 3x107…

Q: Calculate (a) the thermal wavelength, (b) the translational partition function of an Ar atom in a…

Q: Calculate the effective density of states for electrons and holes and intrinsic carrier…

Q: Calculate the minimum voltage required to excite the following lines. The numbers are the wavelength…

A: a) Formula Used: The formula to calculate the minimum voltage required for the excitation of k lines…

Q: If the gain of the effective medium in a laser is (1.05), its mirror reflectivity coefficient (0.999…

Q: Calculate the number of Frenkel defects per cubic meter in potassium chloride at 500degC. The energy…

Q: H.w/ find the 0/p of PCM for i/p signal x(t) = 3.5sin(2000nt), the sampling frequency 5 kHz for…

A: We have givenInput signal x(t)=3.5sin(2000πt)andSampling frequency (f)= 5 kHzQuantization level=8We…

Q: A sample of Si is doped with 1016 phosphorus atoms /cm³, find the Hall voltage in a sample with…

A: The data given is as follows: 1. Doping, n=1016 atoms/cm3 =1016 atoms/10-6 m3n=1022 atoms/m3 2.…

Q: The thickness of the PN depletion region increases when diode is

A: The depletion region of a PN junction diode is a region of immobile positive and negative charges…

Q: Calculate holes and electrons concentration in compensated silicon p-type sample. If T=300 K,…

A: Solution: The electron concentration for p-type semiconductor at 300K is given by:…

Q: Suppose a pure Si crystal has 5 × 1028 atoms m-3. It is doped by 1 ppm concentration of pentavalent…

A: Given: Number of Si crystal, n = 5 × 1028 atoms m-3 Dopping = 1 ppm = 10-6 ni =1.5 × 1016 m-3.

Q: Consider spherical nanoparticles of copper with diameters of 10 and 100 nm. A) Calculate the total…

Q: from E-k curve, Q. 1; 3 Energy (eV) GaAs ΔΕ 0.31 Valence band [111] O k (a) 1. Energy gap, Eg 2.…

A: Given:- Eg= 1.42 ev

Q: At a certain temperature, the electron and hole mobilities in intrinsic germanium are given as 0.43…

A: Electron mobility: e = 0.43 m2/Vs Hole mobility: h = 0.21 m2/Vs Electron concentration = Hole…

Q: A GaAs sample with nna = 1015 cm-³ is illuminated with light and 1013 electron-hole pairs/cm3 %3D…

Q: A population inversion for two energy level is often described by assigning a negativeKelvin…

A: Given: The increase in energy level is N=10%. The energy difference between two levels is E'-E=2.1…

Q: A three-level laser emits a light of wavelength of 5500 Å. What will be the ratio of population of…

A: The ratio of population of the two states can be written as N2N1=e-ΔEkT…

Q: Fou are given a GAs semiconductor sample and asked to design a PIN photo-detector for macimum…

A: This question can be solved by applying the basic concepts of optoelectronics.

Q: 1. An atom has two atomic levels separated by an energy gap of the 2.26 eV. What is the temperature…

Q: The exchange current density of Pt / H: , H° (aq) is 0.79 mA/cm. What current will flow through…

A: Given data: Exchange current density is io=0.79 mA/cm2. Potential drop is η=5 mV=0.005 V.…

Q: What are the J-coupling splitting patterns expected in 11B (I = 3/2), 1H (I = 1/2), and 2H (I = 1)…

A: 'H NMR Spectrum for BHsDT-Given :'J('H,''B) = 60 Hz'J('H,D) = 2 Hz

Q: The time needed to collect all the positive ions in GM counter filled with air at 740 mm Hg is 50…

A: Given : time needed to collect +ve ions, t = 50 × 10— 6 s radius of cathode, b = 70 × 10—6 m radius…

Q: However, the molecule we can encounter everyday continuously vibrates and interact with the…

Q: Silicon atoms with a concentration of 7x 1010 cm3 are added to gallium arsenide GaAs at T = 400 K.…

A: Calculate the donor and acceptor concentrations in the semiconductor. The concentration of the…

Q: Based on the principle that the bility of stimulated emission is to the probability of absorption,…

Q: Suppose you know a material is p-type, and that the thermal equilibrium electron concentration is no…

A: Given:- The thermal equilibrium electron concentration is no = 2.0 x 1010 cm-3. Find:- What can you…

Q: 2. a) The intrinsic carrier concentration in GaAs at 300 K is 1.8 x 106 cm³. What is the carrier…

A: 2 a) Given the Intrinsic carrier concentration in GaAs at 300 K C =1.8×106cm-3 Now to find the…

Q: : find the relaxion time for electron if the mobility of ele 00cm²v's' and the / m, =0.26?

A: The relaxation time is given as T = u M/e Where u is mobility of electron M is mass of electron E is…

Q: Graph below shows the electron occupancy probability P(E) as a function of energy for Bismuth (mB¡ =…

Q: Inert concentration in germanium semiconductor material at T=400K(x10^14 per cm^3)

A: SOlurtion: Given that Gemanium semicondcutor T=400K(x10^14 per cm^3)

Q: A sample of Si at 300 K doped with 1016 cm3 Boron, with recombination lifetime 3 us. It is exposed…

A: We have givenSi at 300 k doped with 1016 cm-3 Boron Lifetime=3 μsGeeneration rate =1020 / cm3/s

Q: A GaAs sample with nna = 1015 cm-3 is illuminated with light and 1013 electron-hole pairs/cm? are…

Q: The time needed to collect all the positive ions in GM counter filled with air at 740 mm Hg is 50…

A: The operating voltage required to collect all the positive ions in GM counter can be calculated by…

Q: Which one of the following plots represents the variation of gravitational field on a particle with…

A: The gravitational field with on a particle with distance r due to a spherical shell of radius R is…

Q: i have a sample of C02O3 with only schottiky defects and dope it with Li2O 9- a) What are the…

A: As the way it is mentioned in case of Co(III) oxide Schottky Defects are present that means there is…

Q: A 10 monolayers thick layer of Ag is deposited on Mo. The intensity of electrons emitted by the Ag…

A: Given: 10 monolayer of thick layer of Ag is deposited on Mo Ratio of…

Q: calculate the fermi temperature for element X. where its fermi energy is 4.69 ev

A: Given data: Fermi energy (Ef)= 4.69 eV k = 1.3807 x 10-23 J/K Convert the energy eV to J 1 eV =…

Q: An NPN transistor is used in common emitter configuration as an amplifier with 1 kQ load resistance.…

Concept explainers

The Bohr model

Students often get confused between Rutherford’s model and Bohr model of an atom. They interpret the postulates of both these models to be the same, which is incorrect. Rutherford’s model differs from Bohr’s model in the following ways:

Question

I need the answer as soon as possible

A sample of Ge at 300K has a uniform donor concentration of 2 x 1013cm3. The excess
carrier lifetime is found to be Tp0= 24 us. The electron lifetime (us), n;-2.4 x 1013cm-3?

Expert Solution

This question has been solved!

Explore an expertly crafted, step-by-step solution for a thorough understanding of key concepts.

SEE SOLUTION Check out a sample Q&A here

Step 1

VIEW

Step 2

VIEW

Step 3

VIEW

Step by step

Solved in 3 steps with 4 images

SEE SOLUTION Check out a sample Q&A here

Knowledge Booster

Learn more about

Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, physics and related others by exploring similar questions and additional content below.

Similar questions

A Alo 35 Ga0.65As/G.AS/Alo 35Gao.65AS pn" DH LED made of very high quality semiconductors has a radiative lifetime of t,=9 ns and nonradiative of tn -96 ns. At 300 K the LED is biased with a voltage V=2 V and the injected current at the biased voltage is I= 66 m4. Calculate the number of photons extracted from the LED that are normally incident to air from the GaAs active region. O a. 3.584e17 s-1 O b. 5.300e16 s-1 O c. 6.224e15 s-1 O d. 4.904e19 s-1 O e. 4.904e21 s-1
Problems Q1: Calculate electrons and holes concentration in a germanium sample If T=300 K, Na-5×10¹%/m³, N₁-0. Assume that n=2.4×10¹⁹/m³. (Ans: 5.97×10¹⁹/m³, 9.65×10¹8/m³)
If the radius of a calcium ion is 0.19 nm, how much energy does it take to singly ionize it? Give your answer in electron-volts (eV) with precision 0.1 eV. Give your answer to 2 significant digits. (with step pls)
Q7. A Si sample is doped with 1016 cm-3 donor impurity is exposed by light at x = 0 to generate excess EHP of amount 1014/cm³. Excess carriers travel 1 cm distance in 0.4 ms time under a field of 2 V/cm. (a) Calculate p(x) and n(x) at x = 2Lp. (b) Calculate diffusion current density at x= 0, Lp, and 2Lp. (c) Calculate mobility for majority and minority carriers. [Dp = 25 cm²/sec, Dn = 50 cm²/sec, T₁ = Tp = 10 ns]
475 cm /volt-s, and E, = 1.1 eV, 6? Given these data for Si: 4, = 1350 cm/volt-s, H calculate the following. a) The lifetimes for the electron and for the hole. b) The intrinsic conductivity a at room temperature. c) The temperature dependence of o, assuming that electron collision is dominated by phonon scattering, and plot log o versus 1/T. %3D 7. Repeat Problem 6 for Ge, using Tables 6 L and 6 ?
A. If the position of a chlorine ion in a membrane is measured to an accuracy of 1.50 µm, what is its minimum uncertainty in velocity (in m/s), given its mass is 5.86 10-26 kg? B. If the ion has this velocity, what is its kinetic energy in eV? (Compare this with typical molecular binding energies of about 5 eV.)
A germanium diode is used to detect radiation with energy of 1.6 MeV. To do so, the anode (positive terminal) is exposed to the incoming radiation. Assume that the energy is absorbed entirely at the point of entry or the anode. With mobilities of 1,150 cm?/V.s for holes and 3,750 cm?/V.s for electrons, calculate the current through the diode with reverse bias: V = 24 V and d = 12 mm. Neglect the effects of electrodes and 4. of the n and p layers and assume a single radiation event, that is a single particle or a short burst of radiation. (Charge of an electron = 1.602 x 10-19 C; d is the distance between anode and cathode).
The emergence of line spectra from a gas when a current passes through it was an observed phenomenon waiting for an explanation in the early 20th century. The atomic line spectra coming from elements such as hydrogen had been analyzed since the late 19th century. By studying the wavelength of the emerging radiation of hydrogen, experimenters found (often by trial and error) that the wavelengths in those spectra were described by the formula 1 = R ( 1/2 - 1/2 ) where R is known as the Rydberg constant. It has a value of R=1.097 × 107 m-¹. The variables n₁ and no are integer numbers (n₁ = 1, 2, 3, 4, ...). As experiments continued, scientists began to see more and more characteristic lines emerging from the hydrogen spectrum. Each of them corresponded to a wavelength predicted by this formula with some integer values for m₁ and ₂. In 1913, Niels Bohr provided an explanation for the observations made in experiments by proposing that each electron in an atom had only certain allowable…
The exchange current densities for a hydrogen-evolution reaction on three different metals are 5x10* A/em', 3x107 A/cm', and 5x10" A/cm, respectively. Calculate the current densities and the polarization resistances if the reactions proceed at n = -0.08 V versus SHE. The electrode surface area is I cm and a = 0.5. Solution:
Q:: A Si sample is doped with 107 cm3 As. What is the equilibrium hole concentration at 300 k? and where is Ep relative to E,? Take n = 1.5 x 1010 cm-. (Ans. 2.25 x 10'cm,0.407ev).
An HCl molecule vibrates with a natural frequency of 8.1 x1013 Hz What is the difference in energy (in joules and electron volts) between successive values of the oscillation energy?
1. Consider a commercial power laser diode with an emission wavelength of 730nm. The threshold current when diode is operated at 30°C is 20 mA. The typical operating voltage for this device is 2V. At I = 100 mA. The output optical power is 60 mW. (a) Calculate the External Quantum Efficiency (EQE), External Power Efficiency (PCE), slope efficiency (nslope) of the laser diode. (b) What is the current required for an output optical power of 100 mW? (Hint: use nslope)