A group IV semiconductor has an intrinsic carrier concentration of 2.4×10^13 cm−3 at 300 K. Mobility of electron (un) = 3900 cm2/V Mobility of hole (up) = 1900 cm2/V The semiconductor was then doped with 10^18 cm−3 P atoms. What will be electrical conductivity of it?

A group IV semiconductor has an intrinsic carrier concentration of 2.4×10^13 cm−3 at 300 K. Mobility of electron (un) = 3900 cm2/V Mobility of hole (up) = 1900 cm2/V The semiconductor was then doped with 10^18 cm−3 P atoms. What will be electrical conductivity of it?

Electricity for Refrigeration, Heating, and Air Conditioning (MindTap Course List)

10th Edition

ISBN:9781337399128

Author:Russell E. Smith

Publisher:Russell E. Smith

Chapter12: Electronic Control Devices

Section: Chapter Questions

Problem 14RQ

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Question

A group IV semiconductor has an intrinsic carrier concentration of 2.4×10^13 cm−3 at 300 K.

Mobility of electron (u_n) = 3900 cm²/V

Mobility of hole (u_p) = 1900 cm²/V

The semiconductor was then doped with 10^18 cm−3 P atoms. What will be electrical conductivity of it?

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