a) Given a Si p-n junction diode. Write three separate equations for the current densities due to (i) diffusion, (ii) recombination, and (iii) generation.

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a) Given a Si p-n junction diode. Write three separate equations for the current densities due to
(i) diffusion, (ii) recombination, and (iii) generation.
b) If a p-i-n diode is now used, show (with relevant equations) that the maximum electric field in this p-i-n
junction is reduced compared to that of a regular p-n junction diode.
c) What is subthreshold slope and why is it important? Why diodes have a perfect subthreshold slope
value of 60 mV/decade? Can its value be below 60 mV per decade?
d) Show that the effective normal field in a MOSFET can be expressed as:
Vr + 0.2, VGs – Vr
3Tox
-
= 3
ох
6Tox
Transcribed Image Text:a) Given a Si p-n junction diode. Write three separate equations for the current densities due to (i) diffusion, (ii) recombination, and (iii) generation. b) If a p-i-n diode is now used, show (with relevant equations) that the maximum electric field in this p-i-n junction is reduced compared to that of a regular p-n junction diode. c) What is subthreshold slope and why is it important? Why diodes have a perfect subthreshold slope value of 60 mV/decade? Can its value be below 60 mV per decade? d) Show that the effective normal field in a MOSFET can be expressed as: Vr + 0.2, VGs – Vr 3Tox - = 3 ох 6Tox
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