A flat, circular silicon wafer is uniformly heated by a flat, circular surface located above it. The wafer's back side is perfectly insulated, and the heating occurs in vacuum. The power supplied to the hemispherical surface is 10 kW. Assume that all surfaces are gray, diffuse, and opaque, and that steady state exists. The view factor between the heater and the wafer, F13-0.1716. a) Draw the radiation network for this configuration. b) Determine F12- c) Determine the temperature of the heater surface. d) Determine the temperature of the wafer.

Principles of Heat Transfer (Activate Learning with these NEW titles from Engineering!)
8th Edition
ISBN:9781305387102
Author:Kreith, Frank; Manglik, Raj M.
Publisher:Kreith, Frank; Manglik, Raj M.
Chapter11: Heat Transfer By Radiation
Section: Chapter Questions
Problem 11.55P
icon
Related questions
Question

A flat, circular silicon wafer is uniformly heated by a flat, circular surface located above it. The
wafer’s back side is perfectly insulated, and the heating occurs in vacuum. The power supplied to
the hemispherical surface is 10 kW. Assume that all surfaces are gray, diffuse, and opaque, and that
steady state exists. The view factor between the heater and the wafer, F13=0.1716.
a) Draw the radiation network for this configuration.
b) Determine F12.
c) Determine the temperature of the heater surface.
d) Determine the temperature of the wafer.

 

4. A flat, circular silicon wafer is uniformly heated by a flat, circular surface located above it. The
wafer's back side is perfectly insulated, and the heating occurs in vacuum. The power supplied to
the hemispherical surface is 10 kW. Assume that all surfaces are gray, diffuse, and opaque, and that
steady state exists. The view factor between the heater and the wafer, F13-0.1716.
a) Draw the radiation network for this configuration.
b) Determine F12.
c) Determine the temperature of the heater surface.
d) Determine the temperature of the wafer.
Heater
= lokw
Di
E, = 0.8
D, = 0.2m
Sorroοvn&iv
Tz=300K
Ez=1
0.3.m
CWafer
Insulated
€2 = 0.6
Dz = 0,2m
Transcribed Image Text:4. A flat, circular silicon wafer is uniformly heated by a flat, circular surface located above it. The wafer's back side is perfectly insulated, and the heating occurs in vacuum. The power supplied to the hemispherical surface is 10 kW. Assume that all surfaces are gray, diffuse, and opaque, and that steady state exists. The view factor between the heater and the wafer, F13-0.1716. a) Draw the radiation network for this configuration. b) Determine F12. c) Determine the temperature of the heater surface. d) Determine the temperature of the wafer. Heater = lokw Di E, = 0.8 D, = 0.2m Sorroοvn&iv Tz=300K Ez=1 0.3.m CWafer Insulated €2 = 0.6 Dz = 0,2m
Expert Solution
trending now

Trending now

This is a popular solution!

steps

Step by step

Solved in 5 steps with 1 images

Blurred answer
Knowledge Booster
Convection
Learn more about
Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, mechanical-engineering and related others by exploring similar questions and additional content below.
Similar questions
Recommended textbooks for you
Principles of Heat Transfer (Activate Learning wi…
Principles of Heat Transfer (Activate Learning wi…
Mechanical Engineering
ISBN:
9781305387102
Author:
Kreith, Frank; Manglik, Raj M.
Publisher:
Cengage Learning